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MJD200

Description
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size134KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MJD200 Overview

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

MJD200 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-based maximum capacity80 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment12.5 W
Maximum power dissipation(Abs)13 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)65 MHz
Maximum off time (toff)190 ns
VCEsat-Max1.8 V
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. . . designed for low voltage, low–power, high–gain audio amplifier applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB
IEBO
* When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
2%.
OFF CHARACTERISTICS
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
NPN/PNP Silicon DPAK For Surface Mount
Applications
Complementary
Plastic Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 1
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125
_
C)
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
Thermal Resistance, Junction to Case
Thermal Resistance,
Junction to Ambient*
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TA = 25
_
C*
Derate above 25
_
C
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current — Continuous
Peak
Emitter–Base Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Characteristic
Characteristic
Rating
[
VCEO(sus)
Symbol
Symbol
Symbol
VCEO
VCB
VEB
PD
PD
IC
IB
Value
1.4
0.011
12.5
0.1
5
10
25
40
1
8
Watts
W/
_
C
Watts
W/
_
C
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS
12.5 WATTS
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
MJD200
PNP
MJD210
CASE 369A–13
CASE 369–07
Order this document
by MJD200/D
NPN
0.190
4.826
TJ, Tstg
R
θJC
R
θJA
ICBO
Min
– 65 to + 150
25
Max
10
89.3
Max
100
100
100
(continued)
_
C/W
nAdc
nAdc
Unit
Unit
Vdc
inches
mm
1
0.243
6.172
0.063
1.6
0.118
3.0
0.07
1.8
0.165
4.191

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MJD200 MJD210-1 R73GW2470AA10J MJD200T4 MJD200-1
Description SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS R73 Series Polypropylene Film/Foil, Radial (Automotive Grade) SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
Maker Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G2 IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PDSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code unknow unknow - unknow unknow
Shell connection COLLECTOR COLLECTOR - COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A - 5 A 5 A
Collector-based maximum capacity 80 pF 120 pF - 80 pF 80 pF
Collector-emitter maximum voltage 25 V 25 V - 25 V 25 V
Configuration SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 - 10 10
JESD-30 code R-PDSO-G2 R-PSIP-T3 - R-PDSO-G2 R-PSIP-T3
JESD-609 code e0 e0 - - e0
Number of components 1 1 - 1 1
Number of terminals 2 3 - 2 3
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE - SMALL OUTLINE IN-LINE
Polarity/channel type NPN PNP - NPN NPN
Maximum power consumption environment 12.5 W 12.5 W - 12.5 W 12.5 W
Maximum power dissipation(Abs) 13 W 12 W - - 12 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount YES NO - YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE - GULL WING THROUGH-HOLE
Terminal location DUAL SINGLE - DUAL SINGLE
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 65 MHz 65 MHz - 65 MHz 65 MHz
Maximum off time (toff) 190 ns 190 ns - 190 ns 190 ns
VCEsat-Max 1.8 V 1.8 V - 1.8 V 1.8 V
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