*R
oH
S
CO
TISP3240F3, TISP3260F3,
TISP3290F3,TISP3320F3,TISP3380F3
HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
M
PL
IA
NT
TISP3xxxF3 (HV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
V
DRM
V
180
200
220
240
270
V
(BO)
V
240
260
290
320
380
D Package (Top View)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
NC - No internal connection
Device Symbol
T
R
Planar Passivated Junctions
Low Off-State Current <10 µA
Rated for International Surge Wave Shapes
Waveshape
2/10
µs
8/20
µs
10/160
µs
10/700
µs
10/560
µs
10/1000
µs
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
FCC Part 68
GR-1089-CORE
I
TSP
A
175
120
60
50
45
35
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
.......................................UL Recognized Component
Description
These high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and
customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in five voltage variants to
meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in
both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the
device to switch. The high crowbar holding current helps prevent d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
How To Order
Device
TISP3xxxF3
Package
D, Small-outline
Carrier
Tape And Reeled
Order As
TISP3xxxF3DR-S
Insert xxx value corresponding to protection voltages of 240 through 380
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Rating
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
Symbol
Value
±180
±200
±220
±240
±270
350
175
90
120
I
PPSM
60
55
38
50
50
45
35
I
TSM
di
T
/dt
T
J
T
stg
4.3
250
-65 to +150
-65 to +150
A
A/µs
°C
°C
A
Unit
Repetitive peak off-state voltage, 0
°C
< T
A
< 70
°C
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°C
< T
A
< 70
°C
(see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP
®
device m ust be in thermal equilibrium with 0 °C < T
J
<70 °C. The surge may be repeated after the TISP
®
device
returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Off-state current
Off-state capacitance
Test Conditions
V
D
=
±2V
DRM
, 0
°C
< T
A
< 70
°C
V
D
=
±50
V
f = 100 kHz, V
d
= 100 mV , V
D
= 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
Min
Typ
Max
±10
±10
0.05
0.15
Unit
µA
µA
pF
I
DRM
I
D
C
off
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
=
±V
DRM
, 0
°C
< T
A
< 70
°C
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
±0.1
±0.15
±5
±10
95
45
20
Min
Typ
Max
±10
±240
±260
±290
±320
±380
±267
±287
±317
±347
±407
±0.6
±3
Unit
µA
I
DRM
V
(BO)
Breakover voltage
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
R
SOURCE
= 50
Ω
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = -/+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= 0
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= -5 V
f = 1 MHz, V
d
= 0.1 V r.m.s., V
D
= -50 V
(see Notes 5 and 6)
V
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
A
V
A
kV/µs
µA
Off-state capacitance
57
26
11
pF
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
P
tot
= 0.8 W, T
A
= 25
°C
5 cm
2
, FR4 PCB
Min
Typ
Max
160
Unit
°C/W
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
V
(BO)
I
(BO)
I
DRM
V
(BR)
I
(BR)
V
DRM
V
(BR)M
+v
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
(BO)
Figure 1. Voltage-Current Characteristics for any Terminal Pair
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3HAI
100
TC3HAF
1.2
10
Normalized Breakdown Voltages
V
(BO)
1
V
D
= 50 V
0.1
V
D
= -50 V
0.01
1.1
V
(BR)M
1.0
V
(BR)
Normalized to V
(BR)
I
(BR)
= 100
µA
and 25
°C
Positive Polarity
0.001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3HAJ
100
OFF-STATE CURRENT
vs
ON-STATE VOLTAGE
TC3HAL
1.2
Normalized Breakdown Voltages
V
(BO)
1.1
V
(BR)M
I
T
- On-State Current - A
10
1.0
V
(BR)
Normalized to V
(BR)
I
(BR)
= 100
µA
and 25
°C
Negative Polarity
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
150 °C
25 °C
-40 °C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
Figure 4.
Figure 5.
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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