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BF1108R215

Description
RF Amplifier DC-6GHz NF 3.6dB Gain 15.4dB 50 Ohm
Categorysemiconductor    Discrete semiconductor   
File Size58KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF Amplifier DC-6GHz NF 3.6dB Gain 15.4dB 50 Ohm

BF1108R215 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current10 mA
Vds - Drain-Source Breakdown Voltage3 V
Rds On - Drain-Source Resistance20 Ohms
TechnologySi
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-143R-4
PackagingReel
PackagingMouseReel
PackagingCut Tape
ConfigurationSingle Dual Gate
Height1.1 mm
Length3 mm
Number of Channels1 Channel
Factory Pack Quantityetvvxcyxvrdxbde3000
TypeRF Small Signal MOSFET
Vgs - Gate-Source Voltage7 V
Vgs th - Gate-Source Threshold Voltage- 3 V
Width1.4 mm
Unit Weight0.000321 oz
BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I
Various RF switching applications such as:
N
Passive loop through for VCR tuner
N
Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
L
ins(on)
ISL
off
R
DSon
V
GS(p)
[1]
Quick reference data
Parameter
Conditions
[1]
Min
-
30
-
-
Typ
-
-
12
−3
Max
2
-
20
−4
Unit
dB
dB
V
on-state insertion loss R
S
= R
L
= 50
Ω;
f
1 GHz;
V
SK
= V
DK
= 0 V; I
F
= 0 mA
off-state isolation
drain-source on-state
resistance
gate-source pinch-off
voltage
R
S
= R
L
= 50
Ω;
f
1 GHz;
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
KS
= 0 V; I
D
= 1 mA
V
DS
= 1 V; I
D
= 20
µA
I
F
= diode forward current.

BF1108R215 Related Products

BF1108R215 BF1108R235
Description RF Amplifier DC-6GHz NF 3.6dB Gain 15.4dB 50 Ohm RF MOSFET Transistors Single N-CH 7V 10mA 4 LEADS, REVERSE PIN
Product Category RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP
RoHS Details Details
Transistor Polarity N-Channel N-Channel
Id - Continuous Drain Current 10 mA 10 mA
Vds - Drain-Source Breakdown Voltage 3 V 3 V
Rds On - Drain-Source Resistance 20 Ohms 20 Ohms
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-143R-4 SOT-143R-4
Configuration Single Dual Gate Single
Height 1.1 mm 1.1 mm
Length 3 mm 3 mm
Type RF Small Signal MOSFET RF Small Signal MOSFET
Vgs - Gate-Source Voltage 7 V 7 V
Width 1.4 mm 1.4 mm
Unit Weight 0.000321 oz 0.000321 oz
Packaging Cut Tape Reel
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