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BUK794R1-40BT

Description
TrenchMOS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size104KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK794R1-40BT Overview

TrenchMOS standard level FET

BUK794R1-40BT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)272 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D
2
-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s
Integrated temperature sensor
s
Very low on-state resistance
s
Q101 compliant
s
175
°C
rated.
1.3 Applications
s
Electrical Power Assisted Steering
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching.
1.4 Quick reference data
s
s
R
DSon
= 3.4 mΩ (typ)
V
DS
40 V
s
I
D
75 A
s
P
tot
272 W.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Pinning - SOT426 and SOT263B, simplified outline and symbol
Simplified outline
mb
mb
Description
gate (g)
anode (a)
drain (d)
cathode (k)
source (s)
mounting base;
connected to drain (d)
Symbol
d
a
g
1 2 3 4 5
03nm72
s
k
Front view
MBK127
1
5
SOT426 (D
2
-PAK)
MBL263
SOT263B (TO-220AB)
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