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IRFH6200TR2PBF

Description
MOSFET MOSFT 20V 100A 1.2mOhm 2.5V cpbl
Categorysemiconductor    Discrete semiconductor   
File Size278KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRFH6200TR2PBF Overview

MOSFET MOSFT 20V 100A 1.2mOhm 2.5V cpbl

IRFH6200TR2PBF Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CasePQFN-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance1.2 mOhms
Vgs - Gate-Source Voltage12 V
Qg - Gate Charge155 nC
ConfigurationSingle
PackagingReel
PackagingCut Tape
Height0.83 mm
Length6 mm
Pd - Power Dissipation250 W
Factory Pack Quantity400
Transistor Type1 N-Channel
Width5 mm
IRFH6200TRPbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
(@V
GS
= 2.5V)
20
0.99
1.50
155
1.3
100
V
nC
Ω
A
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
h
PQFN 5X6 mm
Applications
Charge and discharge switch for battery application
Load switch for 12V (typical) bus
Hot-Swap Switch
Features
Low R
DSon
(≤ 0.99mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Base Part Number
IRFH6200PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
IRFH6200TRPbF
IRFH6200TR2PbF
Note
EOL Notice #259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
mb
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20
±12
49
40
100
100
400
3.6
156
0.029
-55 to + 150
Units
V
g
g
c
h
h
A
W
W/°C
°C
g
Notes

through
†
are on page 9
1
www.irf.com
©
2015 International Rectifier
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