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BUL147G

Description
Bipolar Transistors - BJT 8A 400V 125W NPN
CategoryDiscrete semiconductor    The transistor   
File Size246KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUL147G Overview

Bipolar Transistors - BJT 8A 400V 125W NPN

BUL147G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionLEAD FREE, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)14 MHz
BUL147
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147 have an applications specific state−of−the−art die
designed for use in electric fluorescent lamp ballasts to 180 Watts and
in Switchmode Power supplies for all types of electronic equipment.
Features
http://onsemi.com
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Parametric Distributions are Tight and Consistent Lot−to−Lot
Two Package Choices: Standard TO−220 or Isolated TO−220
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
9.0
8.0
16
4.0
8.0
125
1.0
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
8.0 AMPERES, 700 VOLTS,
45 AND 125 WATTS
1
2
TO−220AB
CASE 221A−09
STYLE 1
3
MARKING DIAGRAM
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
BUL147G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.0
62.5
260
Unit
_C/W
_C/W
_C
BUL147
A
Y
WW
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUL147
BUL147G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
August, 2006
Rev. 7
1
Publication Order Number:
BUL147/D

BUL147G Related Products

BUL147G BUL147
Description Bipolar Transistors - BJT 8A 400V 125W NPN Bipolar Transistors - BJT 8A 400V 125W NPN
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-220AB TO-220AB
package instruction LEAD FREE, CASE 221A-09, 3 PIN CASE 221A-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 221A-09 221A-09
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Other features LEADFORM OPTIONS ARE AVAILABLE LEADFORM OPTIONS ARE AVAILABLE
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 8 8
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 125 W 125 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 14 MHz 14 MHz
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