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DCC010-TB-E

Description
Gate Drivers
CategoryDiscrete semiconductor    diode   
File Size49KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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DCC010-TB-E Overview

Gate Drivers

DCC010-TB-E Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
package instruction1147A, CP, 3 PIN
Contacts3
Manufacturer packaging code318AN
Reach Compliance Codecompliant
Base Number Matches1
Ordering number :EN1896B
DCC010
Sillicon Epitaxial Planar Type (Series Connection)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1147A
[DCC010]
1:Anode
2:Cathode
3:Cathode, Anode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1µs)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Unit Rating
Unit Rating
Unit Rating
Conditions
SANYO:CP
Ratings
85
80
300
210
100
70
4
2.8
200
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Forward Voltage
Symbol
VF(1)
VF(2)
VF(3)
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
IR(1)
IR(2)
C
trr
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
, Irr=0.1Irp
Conditions
Ratings
min
typ
0.60
0.72
1.20
0.1
0.5
3.0
4.0
max
Unit
V
V
V
µA
µA
pF
ns
· Marking:W7
Reverse Recovery Time Test Circuit
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/32996GI (KOTO)/D2028TA/N148TA, TS No.1896-1/2
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