BSP296NH6433XTMA1 datasheet, PDF

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BSP296NH6433XTMA1: DescriptionMOSFET SMALL SIGNAL N-CH; CategoryDiscrete semiconductor The transistor; File Size552KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP296NH6433XTMA1 Overview

MOSFET SMALL SIGNAL N-CH

BSP296NH6433XTMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	10 weeks
Other features	AVALANCHE RATED; LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	15 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	1.2 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	4.6 A
Guideline	AEC-Q101
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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BSP296N

OptiMOS Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level (4.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

™

Product Summary

DS(on),max

=10 V

=4.5 V

100

0.6

0.8

1.2

PG-SOT223

Type

BSP296N

Package

SOT223

Tape and Reel Information

H6327: 1000 pcs/ reel

Marking

BSP296N

Halogen-Free

Yes

Packing

Non dry

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

Avalanche energy, single pulse

D,pulse

=25 °C

=1.2 A,

=25

=1.2 A,

=80 V,

di /dt =200 A/µs,

j,max

=150 °C

Value

1.2

0.9

4.6

15.0

Unit

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

Power dissipation

Operating and storage temperature

ESD Class

Soldering Temperature

IEC climatic category; DIN IEC 68-1

tot

stg

JESD22-A114 -HBM

=25 °C

±20

1.8

-55 ... 150

0 (<250V)

260 °C

55/150/56

°C

Rev 2.0

page 1

2013-04-04

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