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BSP135-H6906

Description
Audio Amplifiers SoundPlus(TM) Hi-Perf Aud Oper Amp
Categorysemiconductor    Discrete semiconductor   
File Size421KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSP135-H6906 Overview

Audio Amplifiers SoundPlus(TM) Hi-Perf Aud Oper Amp

BSP135-H6906 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current120 mA
Rds On - Drain-Source Resistance25 Ohms
Vgs th - Gate-Source Threshold Voltage- 2.1 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge4.9 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeDepletion
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time182 ns
Forward Transconductance - Min80 mS
Height1.6 mm
Length6.5 mm
Pd - Power Dissipation1.8 W
Rise Time5.6 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time5.4 ns
Width3.5 mm
Unit Weight0.003951 oz
BSP135
SIPMOS Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
®
Product Summary
V
DS
R
DS(on),max
I
DSS,min
600
60
0.02
V
W
A
PG-SOT223
Type
Type
BSP135
BSP135
BSP135
BSP135
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel Information
Tape and Reel Information
H6327: 1000 pcs/reel
L6327: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands   
1)
  
L6906: 1000 pcs/reel
Marking
Marking
BSP135
BSP135
BSP135
BSP135
Packaging
Packaging
Non dry
Non dry
Non dry
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.12 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.12
0.10
0.48
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1A(>250V,<500V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
 see table on next page and diagram 11
Rev. 1.33
page 1
2012-11-29

BSP135-H6906 Related Products

BSP135-H6906 BSP135H6327XTSA1 BSP135-L6327
Description Audio Amplifiers SoundPlus(TM) Hi-Perf Aud Oper Amp IGBT Transistors Trenchstop 5 IGBT MOSFET N-Ch 600V 120mA SOT-223-3
Configuration Single SINGLE WITH BUILT-IN DIODE Single Dual Drain
Product Category MOSFET - MOSFET
Manufacturer Infineon - Infineon
RoHS Details - Details
Technology Si - GaN
Mounting Style SMD/SMT - SMD/SMT
Package / Case SOT-223-4 - SOT-223-4
Number of Channels 1 Channel - 1 Channel
Transistor Polarity N-Channel - N-Channel
Vds - Drain-Source Breakdown Voltage 600 V - 600 V
Id - Continuous Drain Current 120 mA - 120 mA
Rds On - Drain-Source Resistance 25 Ohms - 45000 mOhms
Vgs - Gate-Source Voltage 20 V - 20 V
Minimum Operating Temperature - 55 C - - 55 C
Maximum Operating Temperature + 150 C - + 150 C
Channel Mode Depletion - Depletion
Packaging MouseReel - Cut Tape
Fall Time 182 ns - 5.6 ns
Height 1.6 mm - 1.6 mm
Length 6.5 mm - 6.5 mm
Pd - Power Dissipation 1.8 W - 1.8 W
Rise Time 5.6 ns - 5.6 ns
Factory Pack Quantity 1000 - 1000
Transistor Type 1 N-Channel - 1 N-Channel
Typical Turn-Off Delay Time 28 ns - 28 ns
Typical Turn-On Delay Time 5.4 ns - 5.4 ns
Width 3.5 mm - 3.5 mm
Unit Weight 0.003951 oz - 0.003951 oz
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