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STBV42G-AP

Description
Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
CategoryDiscrete semiconductor    The transistor   
File Size244KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STBV42G-AP Overview

Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN

STBV42G-AP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionROHS COMPLIANT, TO-92AP, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STBV42
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
Compact fluorescent lamps (CFLs)
SMPS for battery charger
TO-92
TO-92AP
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV42G and STBV42G-AP are supplied
using halogen-free molding compound.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
BV42
BV42
BV42G
BV42G
Package
TO-92
TO-92AP
TO-92
TO-92AP
Packaging
Bulk
Ammopack
Bulk
Ammopack
Order codes
STBV42
STBV42-AP
STBV42G
STBV42G-AP
July 2009
Doc ID 7232 Rev 6
1/10
www.st.com
10

STBV42G-AP Related Products

STBV42G-AP STBV42G
Description Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
Is it Rohs certified? conform to conform to
Parts packaging code TO-92 TO-92
package instruction ROHS COMPLIANT, TO-92AP, 3 PIN ROHS COMPLIANT PACKAGE-3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 5
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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