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MJ10007

Description
10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size115KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MJ10007 Overview

10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

MJ10007 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-based maximum capacity275 pF
Collector-emitter maximum voltage400 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Maximum off time (toff)2000 ns
Maximum opening time (tons)800 ns
VCEsat-Max2.9 V
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30 ns Inductive Fall Time — 25
_
C (Typ)
500 ns Inductive Storage Time — 25
_
C (Typ)
Operating Temperature Range –65 to + 200
_
C
The MJ10007 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100
_
C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Preferred
devices are Motorola recommended choices for future use and best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 2
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above 25
_
C
Base Current — Continuous
— Peak (1)
Collector Current — Continuous
— Peak (1)
Emitter Base Voltage
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Emitter Voltage
Data Sheet
Characteristic
Rating
v
10%.
100
15
Symbol
Symbol
TJ, Tstg
VCEO
VCEV
VCEX
R
θJC
VEB
IC
ICM
IB
IBM
PD
TL
10 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 VOLTS
150 WATTS
MJ10007 *
– 65 to + 200
*Motorola Preferred Device
Value
1.17
Max
150
100
0.86
275
500
450
400
2.5
5.0
8.0
10
20
Order this document
by MJ10007/D
CASE 1–07
TO–204AA
(TO–3)
Watts
_
C/W
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
_
C
1
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