NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
N−Channel D
2
PAK, TO−220
Features
•
•
•
•
•
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Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Pb−Free Packages are Available
75 AMPERES
25 VOLTS
R
DS(on)
= 5.6 mW (Typ)
4
Unit
V
dc
V
dc
°C/W
W
1
A
A
°C/W
W
A
°C/W
W
A
°C
mJ
P75N03RG
AYWW
1
Gate
2
Drain
xxxxxxx
G
A
Y
WW
= Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
3
Source
1
Gate
75N03RG
AYWW
2
Drain
2
3
TO−220AB
CASE 221A
STYLE 5
1
2
3
D
2
PAK
CASE 418B
4
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
− Continuous @ T
C
= 25°C
− Single Pulse (t
p
= 10
ms)
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 V
dc
, V
GS
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
DM
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
E
AS
Value
25
±20
1.68
74.4
75
225
60
2.08
12.6
100
1.25
9.7
−55 to
150
71.7
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
T
L
260
°C
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 4
Publication Order Number:
NTB75N03R/D
NTB75N03R, NTP75N03R
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V
dc
, I
D
= 250
mA
dc
)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 150°C)
Gate−Body Leakage Current
(V
GS
=
±20
V
dc
, V
DS
= 0 V
dc
)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mA
dc
)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
GS
= 5 V
dc
, I
D
= 30 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
) (Note 3)
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125°C)
Reverse Recovery Time
(I
S
= 35 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
t
rr
t
a
t
b
Q
RR
V
SD
−
−
−
−
−
−
0.86
0.73
15.6
13.8
1.78
0.004
1.2
−
−
−
−
−
mC
ns
V
dc
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 30 A
dc
, R
G
= 3
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
6.9
1.3
18.4
5.5
13.2
3.3
6.2
−
−
−
−
−
−
−
nC
ns
(V
DS
= 20 V
dc
, V
GS
= 0 V,
f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
1333
600
218
−
−
−
pF
V
GS(th)
1.0
−
R
DS(on)
−
−
g
FS
−
27
−
8.1
5.6
13
8.0
Mhos
1.5
4.0
2.0
−
V
dc
mV/°C
mW
V
(br)DSS
25
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±100
28
20.5
−
−
V
dc
mV/°C
mA
dc
Symbol
Min
Typ
Max
Unit
nA
dc
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2
NTB75N03R, NTP75N03R
140
I
D
, DRAIN CURRENT (AMPS)
120
100
80
60
40
20
0
10 V
5V
8V
6V
140
4.5 V
4V
I
D
, DRAIN CURRENT (AMPS)
120
100
80
60
T
J
= 25°C
40
20
0
0
1
T
J
= 125°C
2
T
J
= −55°C
3
4
5
6
V
DS
≥
10 V
3.5 V
3V
V
GS
= 2.5 V
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.022
V
GS
= 10 V
0.018
0.022
V
GS
= 4.5 V
T
J
= 150°C
0.018
0.014
T
J
= 150°C
T
J
= 125°C
0.006
0.002
0
20
40
T
J
= 25°C
T
J
= −55°C
60
80
100
120
140
0.014
T
J
= 125°C
0.010
T
J
= 25°C
0.010
0.006
T
J
= −55°C
0.002
0
20
40
60
80
100
120
140
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
100
−25
0
25
50
75
100
125
150
0
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance versus Drain Current
and Temperature
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
1000
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTB75N03R, NTP75N03R
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I
G(AV)
) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I
G(AV)
During the rise and fall time interval when switching a
resistive load, V
GS
remains virtually constant at a level
known as the plateau voltage, V
SGP
. Therefore, rise and fall
times may be approximated by the following:
t
r
= Q
2
x R
G
/(V
GG
− V
GSP
)
t
f
= Q
2
x R
G
/V
GSP
where
V
GG
= the gate drive voltage, which varies from zero to V
GG
R
G
= the gate drive resistance
and Q
2
and V
GSP
are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t
d(on)
= R
G
C
iss
In [V
GG
/(V
GG
− V
GSP
)]
t
d(off)
= R
G
C
iss
In (V
GG
/V
GSP
)
The capacitance (C
iss
) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating t
d(on)
and is read at a voltage corresponding to the
on−state when calculating t
d(off)
.
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
2400
C
iss
2000
C, CAPACITANCE (pF)
1600
1200
800
400
0
10
V
DS
= 0 V V
GS
= 0 V
5
V
GS
0
V
DS
5
10
15
20
C
oss
C
rss
C
rss
T
J
= 25°C
C
iss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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NTB75N03R, NTP75N03R
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
8
1000
6
Q
T
4
Q
1
Q
2
t, TIME (ns)
V
GS
100
t
d(off)
10
t
d(on)
t
f
t
r
1
V
DS
= 10 V
I
D
= 35 A
V
GS
= 10 V
100
2
I
D
= 35 A
T
J
= 25°C
0
0
8
12
Q
G
, TOTAL GATE CHARGE (nC)
4
16
1
10
R
G
, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
70
IS, SOURCE CURRENT (AMPS)
V
GS
= 0 V
60
50
40
30
T
J
= 150°C
20
10
0
0
T
J
= 25°C
0.6
0.8
0.2
0.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded and the
transition time (t
r
,t
f
) do not exceed 10
ms.
In addition the total
power averaged over a complete switching cycle must not
exceed (T
J(MAX)
− T
C
)/(R
qJC
).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I
D
can safely be assumed to
equal the values indicated.
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