DMN2300UFL4
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
Max R
DS(ON)
195mΩ @ V
GS
= 4.5V
260mΩ @ V
GS
= 2.5V
20V
380mΩ @ V
GS
= 1.8V
520mΩ @ V
GS
= 1.5V
1.51A
1.29A
I
D
max
T
A
= +25°
C
(Note 6)
2.11A
1.83A
Features and Benefits
Footprint of Just 1.3 mm
2
Ultra Low Profile Package - 0.4mm Profile
On Resistance <200mΩ
Low Gate Threshold Voltage
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN1310-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Load Switch
D1
D2
G1
ESD PROTECTED TO 2kV
G2
Gate
Protection
Diode
S1
Gate
Protection
Diode
S2
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
DMN2300UFL4-7
Notes:
Marking
23N
Reel Size (inches)
7
Tape Width (mm)
8
Quantity Per Reel
3000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
23N
23N = Product Type Marking Code
DMN2300UFL4
Datasheet Number: DS35946 Rev. 3 - 2
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December 2017
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DMN2300UFL4
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T
A
= +25°
C
T
A
= +85°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
2.11
1.19
6.0
Unit
V
V
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P
D
R
θJA
T
J
,
T
STG
Value
0.53
1.39
238
90
-55 to +150
Unit
W
°
C/W
°
C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
90
80
70
60
50
40
30
20
10
Single Pulse
R
JA
= 230
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
0
0.0001 0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θJA
(t)
= r(t) *
*
R
R
JA
R
JA
(t)
= r(t)
θJA
R
JA
= 230癈 /W
R
θJA
= 230℃/W
Duty Cycle,
D t1/ t2
Duty Cycle,
D =
=
t1 / t2
0.001
0.01
0.1
1
t1,
t1, PULSE DURATION TIME (sec)
PULSE DURATION TIMES (sec)
Fig. 2
2
Transient
Thermal Resistance
Fig. Transient
Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
DMN2300UFL4
Datasheet Number: DS35946 Rev. 3 - 2
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DMN2300UFL4
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
20
—
—
0.45
—
—
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
151
190
247
316
—
0.7
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
Max
—
1
10
0.95
195
260
380
520
—
1.2
128.6
12.2
9.0
140
3.2
0.4
0.4
10
10
60
25
Unit
V
µA
µA
V
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 300mA
V
GS
= 2.5V, I
D
= 250mA
V
GS
= 1.8V, I
D
= 100mA
V
GS
= 1.5V, I
D
= 50mA
V
DS
= 3V, I
D
= 30mA
V
GS
= 0V, I
S
= 300mA
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Note:
mS
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
8. Short duration pulse test used to minimize self-heating effect.
2.0
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 2.0V
2.0
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 1.5V
1.0
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 1.8V
0.5
V
GS
= 1.2V
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
D
I
1.5
1.0
0.5
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
3
DMN2300UFL4
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DMN2300UFL4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.4
0.3
0.2
V
GS
= 2.5V
V
GS
= 4.5V
0.1
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.8
V
GS
= 4.5V
0.6
0.4
T
A
= 125°
C
T
A
= 150°
C
0.2
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
O
(
S
D
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
0
0
0.25
0.5 0.75 1
1.25 1.5 1.75
I
D
, DRAIN CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
2
1.4
V
GS
= 4.5V
I
D
= 1.0A
V
GS
= 2.5V
I
D
= 500mA
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.8
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
V
GS
= 4.5V
I
D
= 1.0A
0.8
0.6
-50
0
25
50
75 100 125 150
C)
T
A
, AMBIENT TEMPERATURE
(°
)
(癈
Fig. 7 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
C)
T
A
, AMBIENT TEMPERATURE
(°
)
(癈
Fig. 8 On-Resistance Variation with Temperature
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
1.0
I
S
, SOURCE CURRENT (A)
2.0
1.6
I
D
= 1mA
0.8
1.2
T
25°
T
A
=
A
= 25癈
C
0.6
I
D
= 250µA
0.8
0.4
T
(
S
G
0.2
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
DMN2300UFL4
Datasheet Number: DS35946 Rev. 3 - 2
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DMN2300UFL4
1,000
T
A
= 125°
C
100,000
I
DSS
, LEAKAGE CURRENT (nA)
I
GSS
, LEAKAGE CURRENT (nA)
)
A
n
(
T
N
E 100
R
R
U
C
E
G
A
K
A
E
10
L
,
S
I
S
D
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
) 10,000
A
n
(
T
N
E
R
1,000
R
U
C
E
G
A
100
K
A
E
L
,
S
S
G
10
I
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
1
1
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current
vs. Drain-Source Voltage
20
2
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
4
8
V
GS
, GATE-SOURCE VOLTAGE (V)
6
V
DS
= 15V
I
D
= 1A
4
2
0
0
0.5
1
1.5
2
2.5
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 13 Gate-Charge Characteristics
3
DMN2300UFL4
Datasheet Number: DS35946 Rev. 3 - 2
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December 2017
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