BFP840FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-04-03
RF & Protection Devices
Edition 2013-04-03
Published by
Infineon Technologies AG
81726 Munich, Germany
©
2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP840FESD
BFP840FESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-04-03, Revision 1.2
Page
P. 8
P. 27
Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-07-11.
Item about AEC-Q101 added to feature list, minor changes.
Picture for marking description updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.2, 2013-04-03
BFP840FESD
Table of Contents
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
2
3
4
5
5.1
5.2
5.3
5.4
5.5
6
7
Product Brief
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
11
11
12
16
19
Simulation Data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Information TSFP-4-1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
Revision 1.2, 2013-04-03
BFP840FESD
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Total Power Dissipation
P
tot
=
f
(
T
s
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP840FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage
I
C
=
f
(
V
CE
),
I
B
= Parameter . . . . . . . . . . . . . . . . .
DC Current Gain
h
FE
=
f
(
I
C
),
V
CE
= 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage
I
C
=
f
(
V
BE
),
V
CE
= 1.8 V . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage
I
B
=
f
(
V
BE
),
V
CE
= 1.8 V . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage
I
B
=
f
(
V
EB
),
V
CE
= 1.8 V . . . . . . . . . . . . . . . . . . .
Transition Frequency
f
T
=
f
(
I
C
),
f
= 2 GHz,
V
CE
= Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output
OIP3
=
f
(
I
C
),
Z
S
=
Z
L
= 50
Ω,
V
CE
,
f
= Parameters . . . . . . . . .
3rd Order Intercept Point at output
OIP3
[dBm]=
f
(
I
C
,
V
CE
),
Z
S
=
Z
L
=
50
Ω,
f
= 5.5 GHz . . . . . .
Compression Point at output
OP
1dB
[dBm]=
f
(
I
C
,
V
CE
),
Z
S
=
Z
L
= 50
Ω,
f
= 5.5 GHz . . . . . . . . . . .
Collector Base Capacitance
C
CB
= f
(
V
CB
),
f
= 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain
G
ma
,
G
ms
, I
S
21
I² =
f
(
f
),
V
CE
= 1.8 V,
I
C
= 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain
G
max
=
f
(
I
C
),
V
CE
= 1.8 V,
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain
G
max
=
f
(
V
CE
),
I
C
= 10 mA,
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient
S
11
=
f
(
f
),
V
CE
= 1.8 V,
I
C
= 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure
Z
opt
=
f
(
f
),
V
CE
= 1.8 V,
I
C
= 5 / 10 / 15 mA . . . . . .
Output Reflection Coefficient
S
22
=
f
(
f
),
V
CE
= 1.8 V,
I
C
= 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
min
=
f
(
f
),
V
CE
= 1.8 V,
I
C
= 5 / 10 / 15 mA,
Z
S
=
Z
opt
. . . . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
min
=
f
(
I
C
),
V
CE
= 1.8 V,
Z
S
=
Z
opt
,
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . .
Noise Figure
NF
50
=
f
(
I
C
),
V
CE
= 1.8 V,
Z
S
= 50
Ω,
f
= Parameter in GHz . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP840FESD: T8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
12
16
16
17
17
18
19
19
20
20
21
21
22
22
23
23
24
24
25
25
27
27
27
27
Data Sheet
5
Revision 1.2, 2013-04-03
京公网安备 11010802033920号
EEWORLD
