MUBW45-12T6K
Converter - Brake - Inverter
Module
(CBI 1)
Trench IGBT
Preliminary data
Part name
(Marking on product)
MUBW45-12T6K
Three Phase
Rectifier
Brake
Chopper
=
Three Phase
Inverter
= 1200 V
=
43 A
2.5 V
V
RRM
= 1600 V V
CES
I
DAVM25
= 151 A I
C25
I
FSM
= 1200 V V
CES
19 A I
C25
= 320 A V
CE(sat)
=
2.9 V V
CE(sat)
=
E72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with Trench IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Package:
• UL registered
• Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
20130626c
© 2013 IXYS All rights reserved
1-6
MUBW45-12T6K
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 45 A; V
GE
= 15 V
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
inductive load
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 36
Ω
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
43
31
160
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
2.5
3.2
5
1.0
1.5
1810
240
90
50
520
90
2.5
3.4
50
3.1
6.5
1.25
400
RBSOA; V
GE
= ±15 V; R
G
= 36
Ω
L = 100 μH; clamped induct. load T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 36
Ω;
non-repetitive
(per IGBT)
(per IGBT)
T
VJ
= 125°C
t
SC
(SCSOA)
R
thJC
R
thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
10
0.8
0.3
μs
K/W
K/W
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 45 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -1700 A/μs
I
F
= 30 A; V
GE
= 0 V
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 100°C
min.
typ.
max.
1200
49
32
3.1
2.3
Unit
V
A
A
V
V
A
ns
μJ
51
180
1.8
0.9
0.3
K/W
K/W
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20130626c
© 2013 IXYS All rights reserved
2-6
MUBW45-12T6K
Brake Chopper T7
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 150°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 15 A; V
GE
= 15 V
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
inductive load
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Ω
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
19
13
90
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
2.9
3.5
4.5
0.8
3.4
6.5
0.5
100
600
45
45
40
290
60
1.2
1.1
20
RBSOA; V
GE
= ±15 V; R
G
= 82
Ω
L = 100 μH; clamped induct. load T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
V
CE
= 720 V; V
GE
= ±15 V;
R
G
= 82
Ω;
non-repetitive
(per IGBT)
(per IGBT)
T
VJ
= 125°C
t
SC
(SCSOA)
R
thJC
R
thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
10
1.35
0.405
μs
K/W
K/W
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
I
RM
t
rr
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 150°C
T
C
= 25°C
T
C
= 80°C
I
F
= 15 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 600 V; I
F
= 10 A
di
F
/dt = -400 A/μs
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 100°C
min.
Ratings
typ. max.
1200
15
10
3.5
2.0
0.06
0.2
13
110
2.5
0.85
Unit
V
A
A
V
V
mA
mA
A
ns
K/W
K/W
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20130626c
© 2013 IXYS All rights reserved
3-6
MUBW45-12T6K
Input Rectifier Bridge D8 - D13
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Symbol
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. surge forward current
total power dissipation
Conditions
Maximum Ratings
1600
V
A
A
A
W
T
C
= 80°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
37
104
320
110
sine 180°
rectangular; d =
1
/
3
; bridge
t = 10 ms; sine 50 Hz
Conditions
Characteristic Values
min.
typ.
max.
1.41
1.38
0.02
0.4
1.1
0.35
V
V
mA
mA
K/W
K/W
V
F
I
R
R
thJC
R
thCH
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
I
F
= 45 A
V
R
= V
RRM
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
Temperature Sensor NTC
Symbol
R
25
B
25/85
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
Weight
Equivalent Circuits for Simulation
I
V
0
R
0
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.45
Ratings
typ. max.
4.7
3510
5.0
Unit
kΩ
K
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
2.2
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
(M4)
2.0
12.7
12.7
40
g
Symbol
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
Definitions
rectifier diode
IGBT
free wheeling diode
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
Ratings
typ. max.
0.90
9
0.95
43
1.5
14
1.5
120
1.46
63
Unit
V
mΩ
V
mΩ
V
mΩ
V
mΩ
V
mΩ
IGBT
free wheeling diode
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20130626c
© 2013 IXYS All rights reserved
4-6
MUBW45-12T6K
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
MUBW 45-12T6K
Marking on Product Delivering Mode Base Qty Ordering Code
MUBW45-12T6K
Box
10
500 131
IXYS reserves the right to change limits, test conditions and dimensions.
20130626c
© 2013 IXYS All rights reserved
5-6
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