N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Reach Compliance Code | unknow |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
| JESD-30 code | R-XDIP-T20 |
| Number of components | 6 |
| Number of terminals | 20 |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 600 ns |
| Nominal on time (ton) | 150 ns |
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