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HVB387BWK

Description
VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size24KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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HVB387BWK Overview

VARIABLE CAPACITANCE DIODE

HVB387BWK Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
HVB387BWK
Variable Capacitance Diode for VCO
ADE-208-1174A (Z)
Rev. 1
Apr. 2001
Features
Low capacitance and to be usable at GHz.
High capacitance ratio. (n = 1.8 min)
Low series resistance. (r
s
= 1.2
max)
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVB387BWK
Laser Mark
V5
Package Code
CMPAK
Pin Arrangement
3
2
1
(Top View)
1. Anode
2. Anode
3. Cathode

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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