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KD30GB80

Description
DIODE MODULE
File Size88KB,2 Pages
ManufacturerSanRex
Websitehttp://www.ecomallbiz.com/sanrex
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KD30GB80 Overview

DIODE MODULE

DIODE MODULE
DD(KD)30GB40/80
UL;E76102 M)
Power Diode Module
DD30GB
series are designed for various rectifier circuits.
DD30GB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
26MAX
93.5MAX
80
3
2
+
1
2- 6.5
Isolated
mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
13
~
16.5
23
23
3M5
KD
21
30MAX
DD
Unit:a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV)
I
F RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Junction Temperature
Storage Temperature
Isolation Breakdown Voltage(R.M.S.)
Mounting
Torque
Mass
Mounting
(M6)
Terminal
(M5)
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
Ratings
DD30GB40
400
480
Conditions
(Tj=25℃
unless otherwise specified)
DD30GB80
800
960
Ratings
30
47
550/600
1500
−40
to
+150
−40
to
+125
2500
4.7(48)
2.7(28)
170
Unit
V
V
Unit
A
A
A
A
2
S
V
N½m
(㎏f½B)
g
Single phase, half wave, 180°
conduction, Tc:118℃
Single phase, half wave, 180°
conduction, Tc:118℃
1
cycle,
2
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj=150℃
Foward current 90A,Tj=25℃,Inst. measurement
Junction to case
Ratings
10
1.40
0.80
Unit
mA
V
℃/W
Rth j-c) Thermal Impedance, max.
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

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