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KSC2690A

Description
Audio Frequency High Frequency Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size50KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

KSC2690A Overview

Audio Frequency High Frequency Power Amplifier

KSC2690A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)155 MHz
KSC2690/2690A
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current(DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
120
160
120
160
5
1.2
2.5
0.3
1.2
20
150
- 55 ~ 150
V
V
V
V
V
A
A
A
W
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.2A
V
CB
=10V, I
E
=0, f = 1MHz
35
60
105
140
0.4
1
155
19
Min.
Typ.
Max.
1
1
320
0.7
1.3
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000

KSC2690A Related Products

KSC2690A KSA2690 KSC2690AO KSC2690AY KSC2690AR KSC2690R KSC2690O KSC2690Y KSC2690 KSC2609A
Description Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier Audio Frequency High Frequency Power Amplifier
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Maker Fairchild - Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild -
Parts packaging code SIP - SIP SIP SIP SIP SIP SIP SIP -
package instruction FLANGE MOUNT, R-PSFM-T3 - TO-126, 3 PIN TO-126, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-126, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 3 - 3 3 3 3 3 3 3 -
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow -
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
Maximum collector current (IC) 1.2 A - 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A -
Collector-emitter maximum voltage 160 V - 160 V 160 V 160 V 120 V 120 V 120 V 120 V -
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 60 - 100 160 60 60 100 160 60 -
JEDEC-95 code TO-126 - TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 -
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
JESD-609 code e0 - e0 e0 e0 e0 e0 e0 e0 -
Number of components 1 - 1 1 1 1 1 1 1 -
Number of terminals 3 - 3 3 3 3 3 3 3 -
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN - NPN NPN NPN NPN NPN NPN NPN -
Maximum power dissipation(Abs) 20 W - 20 W 20 W 20 W 20 W 20 W 20 W 20 W -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount NO - NO NO NO NO NO NO NO -
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 155 MHz - 155 MHz 155 MHz 155 MHz 155 MHz 155 MHz 155 MHz 155 MHz -

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