KSC2690/2690A
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current(DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
120
160
120
160
5
1.2
2.5
0.3
1.2
20
150
- 55 ~ 150
V
V
V
V
V
A
A
A
W
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.2A
V
CB
=10V, I
E
=0, f = 1MHz
35
60
105
140
0.4
1
155
19
Min.
Typ.
Max.
1
1
320
0.7
1.3
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics
1.6
1000
Pulse Test
1.4
V
CE
= 5V
Pulse Test
I
C
[A], COLLECTOR CURRENT
h
FE
, DC CURRENT GAIN
70
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
I
B
=10mA
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
I
B
=0mA
10
20
30
40
50
60
100
10
1
1E-3
0.001
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 5 I
B
Pulse Test
V
BE
(sat)
f = 1MHz
I
E
= 0
1
C
ob
[pF], CAPACITANCE
100
0.1
10
V
CE
(sat)
0.01
1E-3
1
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10
I
C
[A], COLLECTOR CURRENT
V
CE
= 5V
Pulse Test
I
C
(max) Pulse
PW
m
10
s
1m
I
C
(max) DC
1
=
10
100
Dis
sip
Lim ation
ited
s
0u
s
s)
m
50
= t ed
i
W
(P Lim
DC S/b
10
0.1
KSC2690 V
CEO
MAX
0.01
KSC2690A
V
CEO
MAX
1000
1
0.01
0.1
1
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
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DISCLAIMER
HiSeC™
ISOPLANAR™
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POP™
PowerTrench
®
QFET™
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SuperSOT™-3
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SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E