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LT1S40A

Description
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices
File Size81KB,5 Pages
ManufacturerETC
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LT1S40A Overview

2125 Size, 0.8mm Thickness, Leadless Chip LED Devices

Leadless Chip LED Device
LT1t40A series
LT1t40A series
s
Outline Dimensions
(Unit : mm)
2125 Size, 0.8mm Thickness,
Leadless Chip LED Devices
s
Radiation Diagram
(T
a
=25˚C)
-20˚
Relative luminous intensity(%)
2.0
0.8
100
80
60
40
20
0
X
+20˚
+40˚
-40˚
1.25
1
2
Cathode mark
Recommended PWB pattern for soldering
Device center
1.2
1.1
-60˚
+60˚
-80˚
+80˚
0.5
0.3
1.25
1.1
1.25
-20˚
-40˚
Relative luminous intensity(%)
1.Plating area
Resist
2.Pin connections
1 Cathode
2 Anode
1
3.Unspecified tolerance:±0.1
100
80
60
40
20
0
Y
+20˚
+40˚
0.4
0.4
2
-60˚
+60˚
-80˚
+80˚
U type: There is Anode mark on the device because polarity faces in the
opposite direction.
s
Absolute Maximum Ratings
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
(T
a
=25˚C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/˚C)
V
R
T
opr
T
stg
T
sol*2
(V)
(˚C)
(˚C)
(˚C)
DC Pulse
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
350
350
350
350
350
350
350
4
0.40 0.67
50
30
75
LT1U40A
Red(Super-luminosity) GaAlAs on GaAlAs
5
0.13 0.67
50
10
23
LT1P40A
Red
GaP
5
0.40 0.67
50
30
84
LT1D40A
Red
GaAsP on GaP
5
0.40 0.67
50
30
84
LT1S40A
Sunset orange GaAsP on GaP
5
0.40 0.67
50
30
84
LT1H40A
Yellow
GaAsP on GaP
5
0.40 0.67
50
30
84
LT1E40A
Yellow-green GaP
5
0.40 0.67
50
30
84
LT1K40A
Green
GaP
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Forward voltage
V
F
(V)
TYP
1.85
1.9
2.0
2.0
2.0
2.1
2.1
MAX
2.5
2.3
2.8
2.8
2.8
2.8
2.8
Peak emission wavelength
I
F
λ
p
(nm)
(mA)
TYP
20
660
5
695
20
635
20
610
20
585
20
570
20
555
Luminous intensity
I
V
(mcd)
TYP
35.6
1.3
11.9
9.4
10.8
19.0
5.0
I
F
(mA)
20
5
20
20
20
20
20
Spectrum radiation bandwidth
∆λ(nm)
TYP
20
100
35
35
30
30
25
I
F
(mA)
20
5
20
20
20
20
20
Reverse current
V
R
I
R
(µA)
(V)
MAX
3
100
4
10
4
10
4
10
4
10
4
10
4
10
Terminal capacitance
C
t
(pF)
TYP
25
55
20
15
35
35
40
(T
a
=25˚C)
Page for
characteristics
(MH
Z
)
diagrams
1
1
1
1
1
1
1
Lens type
Model No.
LT1U40A
LT1P40A
LT1D40A
Milky
LT1S40A
diffusion
LT1H40A
LT1E40A
LT1K40A
(Notice)
¡In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
¡Data
for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
93

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