PHOTODIODE
GaAsP photodiode
Diffusion type
Red sensitivity extended type
Features
Applications
l
Low dark current
l
High stability
l
Red sensitivity extended type
l
Analytical instruments
l
Color identification
s
General ratings / Absolute maximum ratings
Type No.
G1735
G1736
G1737
G1738
G1740
G3297
Dimensional
outline/
Window
material *
➀/K
➁/K
➂/K
➃/R
➄/R
➅/L
Package
TO-18
TO-5
TO-8
Ceramic
Ceramic
TO-18
Active area
size
(mm)
1.3 × 1.3
2.7 × 2.7
5.6 × 5.6
1.3 × 1.3
5.6 × 5.6
1.3 × 1.3
Effective
active
area
(mm
2
)
1.66
7.26
29.3
1.66
29.3
1.66
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(°C)
(°C)
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
°C
, unless otherwise noted)
Terminal
Temp.
Rise time
Dark
Short circuit
capacitance
coefficient
tr
current
current
Ct
of
V
R
=0 V
Isc
I
D
V
R
=0 V
I
D
Type No.
Max.
l
R
L
=1 kΩ
GaP He-Ne 100
x
T
CID
f=10 kHz
LED
laser
λp
560 nm 633 nm
Min. Typ.
V
4
=10 mV
V
4
=1 V
(nm)
(nm)
(pF)
(µA) (µA) (pA) (pA)
(times/°C)
(µs)
G1735
0.2 0.25 2
20
0.5
250
G1736
0.8 1.1
5
50
1.8
1200
G1737
4
5
10
100
10
4500
0.4 0.22 0.29
1.07
400 to 760
710
G1738
0.2 0.25 2
20
0.5
250
G1740
4
5
10
100
10
4500
G3297
1.5 1.8
2
20
0.5
250
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
Spectral
Peak
response
sensitivity
range
wavelength
λ
λp
Photo sensitivity
S
(A/W)
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Min. Typ.
(GΩ) (GΩ) (W/Hz
1/2
)
5
25 2.0 × 10
-15
2
15 3.2 × 10
-15
1
5 4.5 × 10
-15
5
25 2.0 × 10
-15
1
5 4.5 × 10
-15
5
25 2.0 × 10
-15
GaAsP photodiode
s
Spectral response
0.5
(Typ. Ta=25 ˚C)
Diffusion type
(Typ.)
s
Photo sensitivity temperature characteristic
+1.5
PHOTO SENSITIVITY (A/W)
0.4
TEMPERATURE COEFFICIENT (%/˚C)
+1.0
0.3
+0.5
0.2
0
0.1
0
200
400
600
800
-0.5
200
400
600
800
WAVELENGTH (nm)
KGPDB0024EA
WAVELENGTH (nm)
KGPDB0025EA
s
Rise time vs. load resistance
10
ms
(Typ. Ta=25 ˚C, V
R
=0 V)
s
Dark current vs. reverse voltage
1
nA
(Typ. Ta=25 ˚C)
1
ms
G1737, G1740
G1737, G1740
G1736
100
pA
100
µs
DARK CURRENT
RISE TIME
G1736
10
pA
10
µs
G1735, G1738
G3297
1
µs
1
pA
G1735, G1738, G3297
100
ns
2
10
10
3
10
4
10
5
10
6
100
fA
0.001
0.01
0.1
1
10
LOAD RESISTANCE (Ω)
KGPDB0026EA
REVERSE VOLTAGE (V)
KGPDB0027EA
s
Shunt resistance vs. ambient temperature
(Typ. V
R
=10 mV)
10 TΩ
G1735, G1738, G3297
G1736
100 GΩ
s
Short circuit current linearity
10
0
10
-2
(Typ. Ta=25 ˚C, A light source fully illuminated)
1 TΩ
R
L
=100
Ω
OUTPUT CURRENT (A)
SHUNT RESISTANCE
10
-4
10
10
-6
10 GΩ
G1737, G1740
-8
10
-10
10
-12
10
-14
1 GΩ
100 MΩ
DEPENDENT ON NEP
10 MΩ
-20
0
20
40
60
80
10
-16
10
-16
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
AMBIENT TEMPERATURE (˚C)
KGPDB0028EA
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
GaAsP photodiode
s
Dimensional outlines (unit: mm)
➀
G1735
WINDOW
3.0 ± 0.2
5.4 ± 0.2
Diffusion type
➁
G1736
9.1 ± 0.2
WINDOW
5.9 ± 0.1
3.55 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.4
2.9
5.08 ± 0.2
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
2.54 ± 0.2
CONNECTED
TO CASE
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
14
CONNECTED
TO CASE
KGPDA0012EA
20
4.1 ± 0.2
4.7 ± 0.1
8.1 ± 0.1
KGPDA0013EA
➂
G1737
13.9 ± 0.2
➃
G1738
CATHODE
TERMINAL MARK 6.0 ± 0.2
5.0 ± 0.2
WINDOW
10.5 ± 0.1
12.35 ± 0.1
ACTIVE AREA
5.0 ± 0.2
PHOTOSENSITIVE
SURFACE
7.5 ± 0.2
MARK ( 1.4)
0.45
LEAD
0.6
3.0 ± 0.2
CONNECTED
TO CASE
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
KGPDA0014EA
14
1.5 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
1.9
15
KGPDA0002EA
GaAsP photodiode
Diffusion type
➄
G1740
10.1 ± 0.1
8.9 ± 0.1
➅
G3297
5.4 ± 0.2
4.65 ± 0.1
2.15 ± 0.3
14
4.5 ± 0.2
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.3
0.7
2.0 ± 0.1
0.45
LEAD
10.5
0.5
LEAD
9.2 ± 0.3
7.4 ± 0.2
ANODE
TERMINAL MARK
2.4
2.54 ± 0.2
8.0 ± 0.3
CONNECTED
TO CASE
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
KGPDA0010EA
KGPDA0009EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1003E01
Apr. 2001 DN
Microchip MCU
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