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GA100TS60U

Description
100 A, 600 V, N-CHANNEL IGBT
Categorysemiconductor    Discrete semiconductor   
File Size217KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

GA100TS60U Overview

100 A, 600 V, N-CHANNEL IGBT

GA100TS60U Parametric

Parameter NameAttribute value
Number of terminals7
Rated off time562 ns
Maximum collector current100 A
Maximum Collector-Emitter Voltage600 V
Processing package descriptionINT-A-PAK-7
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Shell connectionISOLATED
Number of components2
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Channel typeN-CHANNEL
Transistor typeINSULATED GATE BIPOLAR
Rated on time313 ns
PD -50055B
GA100TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED
antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL recognition pending
Ultra-Fast
TM
Speed IGBT
V
CES
=
600
V
V
CE
(on) typ.
= 1.6V
@V
GE
=
15V
,
I
C
=
100A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 85°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
100
200
200
200
±20
2500
320
170
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
0.1
200
Max.
0.38
0.70
4.0
3.0
Units
°C/W
N
.
m
g
www.irf.com
1
4/24/2000
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