GAL22V10C-10LJI datasheet, PDF

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GAL22V10C-10LJI: DescriptionEE PLD, 10 ns, PDIP24; CategoryProgrammable logic devices Programmable logic; File Size386KB，29 Pages; ManufacturerLattice; Websitehttp://www.latticesemi.com

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GAL22V10C-10LJI Overview

EE PLD, 10 ns, PDIP24

GAL22V10C-10LJI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Lattice
Parts packaging code	QLCC
package instruction	QCCJ, LDCC28,.5SQ
Contacts	28
Reach Compliance Code	compli
ECCN code	EAR99
Other features	REGISTER PRELOAD; POWER-UP RESET
Architecture	PAL-TYPE
maximum clock frequency	71.4 MHz
JESD-30 code	S-PQCC-J28
JESD-609 code	e0
length	11.5062 mm
Humidity sensitivity level	1
Dedicated input times	11
Number of I/O lines	10
Number of entries	22
Output times	10
Number of product terms	132
Number of terminals	28
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	11 DEDICATED INPUTS, 10 I/O
Output function	MACROCELL
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC28,.5SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programmable logic type	EE PLD
propagation delay	10 ns
Certification status	Not Qualified
Maximum seat height	4.572 mm
Maximum supply voltage	5.5 V
Minimum supply voltage	4.5 V
Nominal supply voltage	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11.5062 mm

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Specifications

GAL22V10

High Performance E

CMOS PLD

Generic Array Logic™

Features

• HIGH PERFORMANCE E

CMOS

TECHNOLOGY

— 4 ns Maximum Propagation Delay

— Fmax = 250 MHz

— 3.5 ns Maximum from Clock Input to Data Output

— UltraMOS

Advanced CMOS Technology

• ACTIVE PULL-UPS ON ALL PINS

Functional Block Diagram

I/CLK

RESET

OLMC

I/O/Q

OLMC

I/O/Q

• COMPATIBLE WITH STANDARD 22V10 DEVICES

— Fully Function/Fuse-Map/Parametric Compatible

with Bipolar and UVCMOS 22V10 Devices

• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR

— 90mA Typical Icc on Low Power Device

— 45mA Typical Icc on Quarter Power Device

• E

CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

• TEN OUTPUT LOGIC MACROCELLS

— Maximum Flexibility for Complex Logic Designs

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

ESCRIPTION

OLMC

I/O/Q

PROGRAMMABLE

AND-ARRAY

(132X44)

OLMC

I/O/Q

OLMC

I/O/Q

OLMC

I/O/Q

OLMC

I/O/Q

OLMC

I/O/Q

OLMC

I/O/Q

OLMC

I/O/Q

PRESET

Description

The GAL22V10, at 4ns maximum propagation delay time, combines

a high performance CMOS process with Electrically Erasable (E

)

floating gate technology to provide the highest performance avail-

able of any 22V10 device on the market. CMOS circuitry allows

the GAL22V10 to consume much less power when compared to

bipolar 22V10 devices. E

technology offers high speed (<100ms)

erase times, providing the ability to reprogram or reconfigure the

device quickly and efficiently.

The generic architecture provides maximum design flexibility by

allowing the Output Logic Macrocell (OLMC) to be configured by

the user. The GAL22V10 is fully function/fuse map/parametric com-

patible with standard bipolar and CMOS 22V10 devices.

Unique test circuitry and reprogrammable cells allow complete AC,

DC, and functional testing during manufacture. As a result, Lat-

tice Semiconductor delivers 100% field programmability and func-

tionality of all GAL products. In addition, 100 erase/write cycles and

data retention in excess of 20 years are specified.

Pin Configuration

DIP

PLCC

I/CLK

I/O/Q

Vcc

I/CLK

I/O/Q

Vcc

I/O/Q

GAL

22V10

I/O/Q

GAL22V10

Top View

GND

I/O/Q

GND

I/O/Q

to change without notice.

LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.

Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com

August 2000

22v10_06

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