PD- 91651C
FB180SA10
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
l
Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
D
V
DSS
= 100V
R
DS(on)
= 0.0065W
G
I
D
= 180A
S
Description
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
S O T -22 7
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Max.
180
120
720
480
2.7
± 20
700
180
48
5.7
-55 to + 150
2.5
1.3
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
N•m
Thermal Resistance
Parameter
R
qJC
R
qCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Typ.
–––
0.05
Max.
0.26
–––
Units
°C/W
1
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2/1/99
FB180SA10
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
s
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.093 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.0065
W
V
GS
= 10V, I
D
= 108A
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 108A
––– 50
V
DS
= 100V, V
GS
= 0V
µA
––– 500
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
––– 200
V
GS
= 20V
nA
––– -200
V
GS
= -20V
250 380
I
D
= 180A
40
60
nC
V
DS
= 80V
110 165
V
GS
= 10.0V, See Fig. 6 and 13
45 –––
V
DD
= 50V
351 –––
I
D
= 180A
ns
181 –––
R
G
= 2.0W (Internal)
335 –––
R
D
= 0.27W See Fig. 10
,
5.0 –––
nH
Between lead,
and center of die contact
––– 10700 –––
V
GS
= 0V
––– 2800 –––
pF
V
DS
= 25V
––– 1300 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 180
showing the
A
integral reverse
––– ––– 720
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 180A, V
GS
= 0V
––– 300 450
ns
T
J
= 25°C, I
F
= 180A
––– 2.6 3.9
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I £
180A, di/dt
£83A/µs,
V
DD
£
V
(BR)DSS
,
SD
T
J
£
150°C
Starting T
J
= 25°C, L =43µH
R
G
= 25W , I
AS
= 180A. (See Figure 12)
Pulse width
£
300µs; duty cycle
£
2%.
2
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FB180SA10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
4.5V
10
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 180A
I
D
, Drain-to-Source Current (A)
2.0
100
1.5
T
J
= 25
°
C
1.0
10
0.5
1
4
5
6
7
V DS = 25V
20µs PULSE WIDTH
8
9
10
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
FB180SA10
20000
C, Capacitance (pF)
15000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= 180 A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
15
C
iss
10000
10
C
oss
5000
C
rss
5
0
1
10
100
0
0
50
100
150
200
FOR TEST CIRCUIT
SEE FIGURE 13
250
300
350
400
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
1000
10us
I
D
, Drain Current (A)
100
10
100
100us
1ms
T
J
= 25
°
C
1
10
10ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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FB180SA10
200
175
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
150
125
100
75
-
V
DD
10V
Pulse Width
£ 1
µs
Duty Factor
£ 0.1 %
Fig 10a.
Switching Time Test Circuit
50
V
DS
25
0
25
50
75
100
125
150
90%
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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