FQPF17N40
— N-Channel QFET
®
MOSFET
December
2013
FQPF17N40
400
V,
9.5
A,
270 mΩ
Description
N-Channel QFET
®
MOSFET
Features
This
N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
9.5
A,
400
V, R
DS(on)
=
270 mΩ
(Max.) @ V
GS
= 10 V,
I
D
=
4.75
A
• Low Gate Charge (Typ.
45
nC)
• Low Crss (Typ.
30
pF)
• 100% Avalanche Tested
D
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
*
6
6
*
=
6
=
!7
:
T
C
= 25°C unless otherwise noted.
2
,-&83
2
,0))83
:
FQPF17N40T
())
%&
9)
4;
±4)
*
'
'
'
*
>
'
>
*7
@
@78
8
8
:
2
,-&83
"!-&8
+
0)))
%&
&9
(&
&9
) (&
&&A0&)
4))
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
Thermal Characteristics
+
+
FQPF17N40T
2.23
-' &
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
6?
6?
©2000 Fairchild Semiconductor Corporation
FQPF17N40
Rev. C1
1
www.fairchildsemi.com
FQPF17N40
— N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQP17N40T
Top Mark
FQP17N40T
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50
units
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
.
.
Max.
C*
∆C*
7
∆
6
6
6
C ?
*
D< *
< C1 ?
< C1 ?
+!
*
,)*6
,-&)µ'
6
*
,())**
,)*
*
,4-)*
,0-&8
*
,4)**
,)*
*
,4)**
,)*
())
) ((
0
0)
0))
0))
*
*78
µ'
µ'
'
'
*
+
< *
*
,*
6
,-&)µ'
*
,0)*6
,( .&'
*
,&)*6
,( .&'
4)
) -0
0)
&)
) -.
*
Ω
*
,-&**
,)*
,0 ) E#
0;))
-.)
4)
-4))
4&)
()
F
F
F
+
<
<
*
,-))*6
,0. -'
+
,-&Ω
(Note 4)
(Note 4)
()
0;&
%)
0)&
(&
00 (
-0 .
%)
4;)
0%)
--)
9)
V
DS
= 320 V, I
D
= 17.2 A,
V
GS
= 10 V
6
6
*
F
*
,)*6
,% &'
*
,)*6
,0. -'
6
7,0))'7µ
-%)
-&
%&
4;
0&
'
'
*
µ
Notes:
1. Repetitive
rating
:
pulse-width
limited by maximum junction temperature.
2. L = 19.4 mH, I
AS
= 9.5 A, V
DD
= 50 V, R
G
= 25
Ω,
starting
T
J
= 25°C.
3. I
SD
≤
17.2 A, di/dt
≤
200 A/µs , V
DD
≤
BV
DSS,
starting
T
J
= 25°C.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQPF17N40
Rev. C1
2
www.fairchildsemi.com
FQPF17N40
— N-Channel QFET
®
MOSFET
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
DUT
I
G
= const.
3mA
Q
gd
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 13. Resistive Switching Test Circuit & Waveforms
V
DS
I
D
R
G
V
GS
10V
GS
t
p
L
BV
DSS
I
AS
V
DD
DUT
V
DD
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
I
D
(t)
V
DS
(t)
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQPF17N40
Rev. C1
5
www.fairchildsemi.com
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