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BIC702C

Description
Bias Controlled Monolithic IC VHF/UHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size60KB,11 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

BIC702C Overview

Bias Controlled Monolithic IC VHF/UHF RF Amplifier

BIC702C Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSC-82
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage6 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Minimum power gain (Gp)18 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BIC702C
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-814D (Z)
5th. Edition
Mar. 2001
Features
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
High |yfs| ;
|yfs| = 29 mS typ. ( f = 1kHz)
Low noise;
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
Provide mini mold package; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1.
2.
Marking is “BZ–”.
BIC702C is individual type number of HITACHI BICMIC.
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