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GI910

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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GI910 Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

GI910 THRU GI917
MEDIUM-SWITCHING PLASTIC RECTIFIER
Reverse Voltage -
50 to 800 Volts
DO-201AD
Forward Current -
3.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Construction utilizes void-free molded plastic technique
High forward current operation
Fast switching for high efficiency
High temperature soldering guaranteed:
250°C/10 seconds, 0.375 (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
MECHANICAL DATA
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GI910
GI911
GI912
GI914
GI916
GI917
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at:
3.0A
9.4A, T
J
=175°C
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 1)
Maximum reverse recovery time
(NOTE 2)
Maximum reverse recovery current
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
3.0
400
280
400
600
420
600
800
560
800
Volts
Volts
Volts
Amps
I
FSM
100.0
Amps
V
F
I
R
C
J
t
rr
I
RM(REC)
R
ΘJA
R
ΘJL
T
J
,T
STG
1.25
1.10
10.0
300.0
28.0
750
2.0
22.0
8.0
-50 to +150
Volts
µA
pF
ns
Amps
°C/W
°C
NOTES:
(1) Measured at 1 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery test conditions: I
F
=1.0A, V
R
=30V, di/dt=50A/µs, and I
rr
=10% I
RM
for measurement of t
rr
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
both leads equally heat sink
4/98

GI910 Related Products

GI910 GI911 GI914 GI917 GI912 GI916
Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
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