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GL34G

Description
0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size175KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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GL34G Overview

0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA

DC COMPONENTS CO., LTD.
R
GL34A
THRU
GL34M
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER
VOLTAGE RANGE - 50 to 1200 Volts
CURRENT - 0.5 Ampere
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Glass passivated junction
SM-2(DO-213AA)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
*Terminals: Solder plated solderable per
MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.036 gram
.150(3.81)
.130(3.33)
.022(.56)
.016(.41)
.068(1.77)
.060(1.52)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
A
= 75
o
C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 0.5A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Maximum Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@T
A
= 25 C
@T
A
= 125 C
JL
C
J
T
J
, T
STG
o
o
GL34A
50
35
50
GL34B
100
70
100
GL34D
200
140
200
GL34G
400
280
400
0.5
30
1.1
5.0
50
30
8.0
GL34J
600
420
600
GL34K
800
560
800
GL34M
UNITS
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
0
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
C/ W
pF
0
-65 to + 175
C
NOTES : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
2. Thermal resistance (Junction to Ambient),.24in
2
(6.0mm
2
) coppeer pads to each terminal.
306

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