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TE28F016B3B90

Description
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
Categorystorage    storage   
File Size287KB,48 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

TE28F016B3B90 Overview

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

TE28F016B3B90 Parametric

Parameter NameAttribute value
Parts packaging codeTSOP
package instructionTSOP1, TSSOP40,.8,20
Contacts40
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time90 ns
Other featuresUSER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G40
length18.4 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8,31
Number of terminals40
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP40,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply1.8/3.6,3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.000005 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitNO
typeNOR TYPE
width10 mm
Base Number Matches1
E
n
n
n
n
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK
4-, 8-, 16-, 32-MBIT
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3, 28F320B3
28F008B3, 28F016B3, 28F032B3
Flexible SmartVoltage Technology
2.7 V–3.6 V Read/Program/Erase
12 V V
PP
Fast Production
Programming
2.7 V or 1.65 V I/O Option
Reduces Overall System Power
High Performance
2.7 V–3.6 V: 90 ns Max Access Time
3.0 V–3.6 V: 80 ns Max Access Time
Optimized Block Sizes
Eight 8-KB Blocks for Data,
Top or Bottom Locations
Up to Sixty-Three 64-KB Blocks for
Code
Block Locking
V
CC
-Level Control through WP#
Low Power Consumption
10 mA Typical Read Current
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
Extended Temperature Operation
–40 °C to +85 °C
n
Flash Data Integrator Software
Flash Memory Manager
System Interrupt Manager
Supports Parameter Storage,
Streaming Data (e.g., Voice)
Automated Program and Block Erase
Status Registers
Extended Cycling Capability
Minimum 100,000 Block Erase
Cycles Guaranteed
Automatic Power Savings Feature
Typical I
CCS
after Bus Inactivity
Standard Surface Mount Packaging
48-Ball
µBGA*
Package
48-Lead TSOP Package
40-Lead TSOP Package
Footprint Upgradeable
Upgrade Path for 4-, 8-, 16-, and 32-
Mbit Densities
ETOX™ VI (0.25
µ)
Flash Technology
n
n
n
n
n
n
n
n
n
n
The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and
interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single
device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective,
monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-
lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be
obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.
July 1998
Order Number: 290580-005
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