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GM71C17800CLJ-7

Description
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
Categorystorage    storage   
File Size71KB,9 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric Compare View All

GM71C17800CLJ-7 Overview

2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM

GM71C17800CLJ-7 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeSOJ
package instructionSOJ,
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH
JESD-30 codeR-PDSO-J28
length18.17 mm
memory density16777216 bi
Memory IC TypeFAST PAGE DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
GM71C17800C
GM71CS17800CL
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
Description
The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6
GM71C(S)17800C/CL-7
50
60
70
13
15
18
t
RC
90
110
130
t
PC
35
40
45
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
Pin Configuration
28 SOJ
V
SS 1
I/O0
2
I/O1
3
I/O2
4
I/O3
5
WE
6
RAS
7
NC
8
A10
9
A0
10
A1
11
A2
12
A3
13
V
CC 14
28
V
SS
27
I/O7
26
I/O6
25
I/O5
24
I/O4
23
CAS
22
OE
21
A9
20
A8
19
A7
18
A6
17
A5
16
A4
15
V
SS
28 TSOP II
V
SS 1
I/O0
2
I/O1
3
I/O2
4
I/O3
5
WE
6
RAS
7
NC
8
28
V
SS
27
I/O7
26
I/O6
25
I/O5
24
I/O4
23
CAS
22
OE
21
A9
20
A8
19
A7
18
A6
17
A5
16
A4
15
V
SS
A10
9
A0
10
A1
11
A2
12
A3
13
V
CC 14
(Top View)
Rev 0.1 / Apr’01

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Description 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM
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