110/111RKI Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• RoHS compliant
• Designed and qualified for industrial level
TO-209AC (TO-94)
RoHS
COMPLIANT
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
I
T(AV)
110 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
110
T
C
90
172
2080
2180
21.7
19.8
400 to 1200
110
- 40 to 140
UNITS
A
°C
A
A
kA
2
s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
40
110/111RKI
80
120
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
VOLTAGE
V
500
900
1300
20
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 93692
Revision: 06-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
110/111RKI Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 83 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
110
90
172
2080
2180
1750
Sinusoidal half wave,
initial T
J
= T
J
maximum
1830
21.7
19.8
15.3
14.0
217
0.82
1.02
2.16
1.70
1.57
200
400
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 6 V resistive load
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 µs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 50 A, T
J
= T
J
maximum, dI/dt = - 5 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs; gate 0 V 25
Ω
VALUES
300
1.0
µs
110
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
20
UNITS
V/µs
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93692
Revision: 06-Jun-08
110/111RKI Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 110 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 140 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 140 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180
80
40
2.5
1.6
1
6.0
VALUES
TYP.
12
3.0
3.0
20
10
-
120
-
-
2
-
mA
V
mA
MAX.
UNITS
W
A
V
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
- 40 to 140
- 40 to 150
0.27
K/W
0.1
15.5
(137)
14
(120)
130
UNITS
°C
N·m
(lbf
⋅
in)
g
TO-209AC (TO-94)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.043
0.052
0.066
0.096
0.167
RECTANGULAR CONDUCTION
0.031
0.053
0.071
0.101
0.169
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93692
Revision: 06-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
110/111RKI Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
Maximum Allowable Case Temperature (°C)
140
130
120
Conduction Angle
Maximum Allowable Case Temperature (°C)
140
130
120
Conduction Period
111RKI Series
R
thJC
(DC) = 0.27 K/W
111RKI Series
R
thJC
(DC) = 0.27 K/W
110
100
90
80
70
30°
60°
90°
120°
0
20
40
60
180°
DC
110
100
90
30°
80
0
20
40
60
80
100
12
Average On-state Current (A)
90°
60°
120°
180°
80 100 120 140 160 180
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
Maximum Average On-state Power Loss (W)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
111RKI Series
T
J
= 140°C
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
A
hS
R
t
0.
6
K/
W
=
0.3
0.
8
W
K/
K/
W
1K
/W
1.5
-D
e lt
a
R
K/ W
2K
/W
4 K/ W
5 K/ W
Fig. 3 - On-State Power Loss Characteristics
220
Maximum Average On-state Power Loss (W)
200
180
160
140
120
DC
180°
120°
90°
60°
30°
0.
6
100
RMS Limit
80
60
40
20
0
Conduction Period
K/
W
1K
/W
1.5
K/ W
2 K/
W
4 K/ W
5 K/ W
0.8
R
K/
W
th
SA
=
3
0.
W
K/
-D
ta
el
R
111RKI Series
T
J
= 140°C
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80
100
120
140
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93692
Revision: 06-Jun-08
110/111RKI Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 110 A
2500
Peak Half Sine Wave On-state Current (A)
2000
Peak Half Sine Wave On-state Current (A)
1800
1600
1400
1200
1000
800
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 140°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 140°C
No Voltage Reapplied
Rated V
RRM
Reapplied
1500
1000
111RKI Series
500
0.01
0.1
1
10
111RKI Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
1000
T
J
= 140°C
100
Instantaneous On-state Current (A)
10
111RKI Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
Transient Thermal Impedance Z
thJC
(K/W)
Steady State Value
R
thJC
= 0.27 K/W
(DC Operation)
0.1
0.01
111RKI Series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Document Number: 93692
Revision: 06-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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