BSS126
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
DSS,min
600
700
V
Ω
0.007 A
PG-SOT-23
Type
BSS126
BSS126
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
1)
Marking
SHs
SHs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.016 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.021
0.017
0.085
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity (HBM) as per
JESD22-A114
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
Class 0
(0 >250 V)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
0.50
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 2.1
page 1
2012-03-14
BSS126
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
V
(BR)DSS
V
GS
=-5 V,
I
D
=250 µA
V
GS(th)
I
D(off)
V
DS
=3 V,
I
D
=8 µA
V
DS
=600 V,
V
GS
=-5 V,
T
j
=25 °C
V
DS
=600 V,
V
GS
=-5 V,
T
j
=125 °C
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
I
GSS
I
DSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=25 V
V
GS
=0 V,
I
D
=3 mA
V
GS
=10 V,
I
D
=16 mA
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.01 A
600
-2.7
-
-
-2.0
-
-
-1.6
0.1
µA
V
-
-
7
-
-
0.008
-
-
-
320
280
0.017
10
100
-
700
500
-
S
nA
mA
Ω
Threshold voltage
V
GS(th)
sorted in bands
2)
J
K
L
M
N
2)
V
GS(th)
V
DS
=3 V,
I
D
=8 µA
-1.8
-1.95
-2.1
-2.25
-2.4
-
-
-
-
-
-1.6
-1.75
-1.9
-2.05
-2.2
V
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 2.1
page 2
2012-03-14
BSS126
Parameter
Symbol Conditions
min.
Dynamic characteristics
I
D
=f(V
GS
);
V
DS
=3 V;
T
j
=25 °C
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=-5 V,
I
F
=16 mA,
T
j
=25 °C
V
R
=300 V,
I
F
=0.01 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.81
160
13.2
0.016
0.064
1.2
240
19.8
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V,
I
D
=10 mA,
V
GS
=-3 to 5 V
-
-
-
-
0.05
1.2
1.4
0.10
0.08
1.8
2.1
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=300 V,
V
GS
=-3…7 V,
I
D
=0.01 A,
R
G
=6
Ω
V
GS
=-5 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
21
2.4
1.0
6.1
9.7
14
115
28
3.2
1.5
9.2
14.5
21
170
ns
pF
Values
typ.
max.
Unit
Rev. 2.1
page 3
2012-03-14
BSS126
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.6
0.025
0.5
0.02
0.4
0.015
P
tot
[W]
0.3
I
D
[A]
0.01
0.005
0
0
40
80
120
160
0
40
80
120
160
0.2
0.1
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
GS
);
V
DS
=3 V;
T
j
=25 °C
parameter:
t
p
10
-1
10 µs
limited by on-state
resistance
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
10
-2
1 ms
10 ms
Z
thJA
[K/W]
0.5
I
D
[A]
10
2
0.2
0.1
0.05
0.02
0.01
single pulse
DC
10
-3
10
-4
10
0
10
1
10
2
10
3
10
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2012-03-14
BSS126
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.04
10 V
1V
0.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
1000
900
800
700
-0.2 V 0 V 0.1 V0.2 V
-0.1 V
0.5 V
0.03
0.2 V
0.1 V
0V
0.02
-0.1 V
-0.2 V
R
DS(on)
[Ω]
600
500
1V
I
D
[A]
400
300
10 V
0.01
200
100
0
0
4
8
12
16
0
0
0.01
0.02
0.03
0.04
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
);
V
DS
=3 V;
T
j
=25 °C
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.025
0.025
0.02
0.02
0.015
0.015
0.01
g
fs
[S]
0.01
0.005
0.005
0
-2
-1
0
1
0
0.000
I
D
[A]
0.005
0.010
0.015
0.020
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2012-03-14
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