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BUK9907-40ATC127

Description
MOSFET TRENCHPLUS MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size251KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9907-40ATC127 Overview

MOSFET TRENCHPLUS MOSFET

BUK9907-40ATC127 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current140 A
Rds On - Drain-Source Resistance6.2 mOhms
Vgs - Gate-Source Voltage15 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time11 us
Height9.4 mm
Length10.3 mm
Pd - Power Dissipation272 W
Rise Time10 us
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 us
Typical Turn-On Delay Time3 us
Width4.5 mm
Unit Weight0.105822 oz
BUK9907-40ATC
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1.
I
D
P
tot
T
j
R
DSon
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C; see
Figure 3;
see
Figure 2 [1]
T
mb
= 25 °C; see
Figure 1
Min
-
-
-55
V
GS
= 5 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
V
GS
= 4.5 V; I
D
= 50 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C
S
F(TSD)
temperature sense
diode temperature
coefficient
temperature sense
diode forward voltage
[1]
Current is limited by power dissipation chip rating.
Symbol Parameter
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Typ
-
-
-
5.8
6
5.2
1.54
Max
140
272
175
7
7.7
6.2
1.68
Unit
A
W
°C
mΩ
mΩ
mΩ
mV/K
Static characteristics
-
-
-
1.4
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
V
F(TSD)
648
658
668
mV
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