L9904
MOTOR BRIDGE CONTROLLER
1
FEATURES
OPERATING SUPPLY VOLTAGE 8V TO 28V,
OVERVOLTAGE MAX. 40V
OPERATING SUPPLY VOLTAGE 6V WITH
IMPLEMENTED STEPUP CONVERTER
QUIESCENT CURRENT IN STANDBY MODE
LESS THAN 50µA
ISO 9141 COMPATIBLE INTERFACE
CHARGE PUMP FOR DRIVING A POWER
MOS AS REVERSE BATTERY PROTECTION
PWM OPERATION FREQUENCY UP TO
30KHZ
PROGRAMMABLE CROSS CONDUCTION
PROTECTION TIME
OVERVOLTAGE, UNDERVOLTAGE, SHORT
CIRCUIT AND THERMAL PROTECTION
REAL TIME DIAGNOSTIC
Figure 1. Package
SO20
Table 1. Order Codes
Part Number
L9904
L9904TR
Package
SO20
Tape & Reel
2
DESCRIPTION
Control circuit for power MOS bridge driver in auto-
motive applications with ISO 9141bus interface.
Figure 2. Block Diagram
VS
10
R CP
ST
1
-
+
Reference
BIAS
=
V
STH
VCC
Charge
pump
11
13
12
CP
CB1
GH1
f ST
VCC
RDG
Overvoltage
Undervoltage
Thermal shutdown
14
R S1
S1
DG
2
Control Logic
V S1TH
=
EN
4
REN
19
R GL1
GL1
18
R GL2
GL2
DIR
5
R DIR
VCC
R PWM
17
R S2
S2
PWM
3
V S2TH
=
PR
6
Timer
15
16
GH2
CB2
RX
7
R RX
VCC
R TX
ISO-Interface
9
K
= 0.5
V
VS
TX
8
I KH
20
GND
September 2013
REV. 5
1/17
L9904
Table 2. Pin Function
N°
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pin
ST
DG
PWM
EN
DIR
PR
RX
TX
K
VS
CP
GH1
CB1
S1
GH2
CB2
S2
GL2
GL1
GND
Open Drain Switch for Stepup converter
Open drain diagnostic output
PWM input for H-bridge control
Enable input
Direction select input for H-bridge control
Programmable cross conduction protection time
ISO 9141 interface, receiver output
ISO 9141 interface, transmitter input
ISO 9141 Interface, bidirectional communication K-line
Supply voltage
Charge pump for driving a power MOS as reverse battery protection
Gate driver for power MOS highside switch in halfbridge 1
External bootstrap capacitor
Source/drain of halfbridge 1
Gate driver for power MOS highside switch in halfbridge 2
External bootstrap capacitor
Source/drain of halfbridge 2
Gate driver for power MOS lowside switch in halfbridge 2
Gate driver for power MOS lowside switch in halfbridge 1
Ground
Description
Figure 3. Pin Connection (Top view)
ST
DG
PWM
EN
DIR
PR
RX
TX
K
VS
1
2
3
4
5
6
7
8
9
10
SO20
20
19
18
17
16
15
14
13
12
11
GND
GL1
GL2
S2
CB2
GH2
S1
CB1
GH1
CP
2/17
L9904
Table 3. Absolute Maximum Ratings
Symbol
V
CB1
, V
CB2
Bootstrap voltage
I
CB1
, I
CB2
V
CP
I
CP
Bootstrap current
Charge pump voltage
Charge pump current
Parameter
Value
-0.3 to 40
-100
-0.3 to 40
-1
-0.3 to 7
±1
-0.3 to 7
-1
-0.3 to V
SX
+ 10
-1
-0.3 to 10
-10
-20 to V
S
-0.3 to 7
-1
-2 to V
VS
+ 2
-10
-0.3 to 40
-1
-0.3 to 28
40
-100
Unit
V
mA
V
mA
V
mA
V
mA
V
mA
V
mA
V
V
mA
V
mA
V
mA
V
V
mA
V
DIR
,V
EN
Logic input voltage
,V
PWM
,V
TX
I
DIR
,I
EN
,I
PWM
,I
TX
V
DG
,V
RX
I
DG
,I
RX
I
GH1
, I
GH2
I
GL1
, I
GL2
V
K
V
PR
I
PR
V
S1
, V
S2
I
S1
, I
S2
V
ST
I
ST
V
VSDC
V
VSP
I
VS
Logic input current
Logic output voltage
Logic output current
Gate driver current
Gate driver current
K-line voltage
Programming input voltage
Programming input current
Source/drain voltage
Source/drain current
Output voltage
Step up output current
DC supply voltage
Pulse supply voltage (T < 500ms)
DC supply current
V
GH1
, V
GH2
Gate driver voltage
V
GL1
, V
GL2
Gate driver voltage
For externally applied voltages or currents exceeding these limits damage of the device may occur!
All pins of the IC are protected against ESD. The verification is performed according to MIL883C, human body
model with R=1.5k, C=100pF and discharge voltage ±2kV, corresponding to a maximum discharge energy of
0.2mJ.
Table 4. Thermal Data
Symbol
T
J
T
JSD
T
JSDH
R
th j-amb
Parameter
Operating junction temperature
Junction temperature thermal shutdown threshold
Junction thermal shutdown hysteresis
Thermal resistance junction to ambient
1)
Value
-40 to 150
min 150
typ 15
85
Unit
°C
°C
°C
°C/W
1. see application note 110 for SO packages.
.
3/17
L9904
Table 5. Electrical Characteristcs
(8V < V
VS
< 20V, V
EN
= HIGH, -40°C
T
J
150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Supply (VS)
V
VS OVH
V
VS OVh
V
VS UVH
V
VS UVh
I
VSL
I
VSH
Overvoltage disable HIGH
threshold
Overvoltage threshold hysteresis
2)
Undervoltage disable HIGH
threshold
Undervoltage threshold
hysteresis
2)
Supply current
Supply current, pwm-mode
V
EN
= 0 ; V
VS
= 13.5V; T
J
< 85°C
V
VS
= 13.5V; V
EN
= HIGH;
V
DIR
= LOW; S1 = S2 = GND
f
PWM
= 20kHz; C
CBX
= 0.1µF;
C
GLX
= 4.7nF; C
GHX
= 4.7nF;
R
PR
= 10k; C
PR
= 150pF
I
VSD
Supply current, dc-mode
V
VS
= 13.5V; V
EN
= HIGH;
V
DIR
= LOW; S1 = S2 = GND
V
PWM
= LOW; C
GHX
= 4.7nF
R
PR
= 10k; C
PR
= 150pF
5.8
10
mA
8.1
6
0.66
50
13
28
33
1.6
7
36
V
V
V
V
A
mA
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Enable input (EN)
V
ENL
V
ENH
V
ENh
R
EN
V
DIRL
V
PWML
V
DIRH
V
PWMH
V
DIRh
V
PWMh
R
DIR
R
PWM
V
DG
R
DG
Low level
High level
Hysteresis threshold
2)
1.5
3.5
1
V
EN
= 5V
16
50
100
1.5
3.5
1
V
DIR
= 0; V
PWM
= 0
16
50
100
V
V
V
k
V
V
V
k
Input pull down resistance
Input low level
Input high level
Input threshold hysteresis
2)
Internal pull up resistance
to internal VCC
3)
Output drop
Internal pull up resistance
to internal VCC
3)
Threshold voltage ratio V
PRH
/
V
PRL
Current capability
Input low level
H-bridge control inputs (DIR, PWM)
DIAGNOSTIC output (DG)
I
DG
= 1mA
V
DG
= 0V
10
20
0.6
40
V
k
Programmable cross conduction protection
4)
N
PR
I
PR
V
TXL
R
PR
= 10k
V
PR
= 2V
1.8
-0.5
1.5
2
2.2
mA
V
ISO interface, transmission input (TX)
4/17
L9904
Table 5. Electrical Characteristcs
(continued)
(8V < V
VS
< 20V, V
EN
= HIGH, -40°C
T
J
150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
V
TXH
V
TXh
R
TX
Parameter
Input high level
Input hysteresis voltage 2)
Internal pull up resistance to
internal VCC 3)
Output voltage high stage
Internal pull up resistance
to internal VCC
3)
ON resistance to ground
Output high delay time
Output low delay time
Input low level
Input high level
Input hysteresis voltage 2)
Input current
ON resistance to ground
Short circuit current
Transmission frequency
2. not tested in production: guaranteed by design and verified in characterization
3. Internal V
VCC
is 4.5V ... 5.5V
4. see page 18 for calculation of programmable cross conduction protection time
Test Condition
Min.
3.5
Typ.
1
Max.
Unit
V
V
V
TX
= 0
10
20
40
k
ISO interface, receiver output (RX)
V
RXL
R
RX
R
RXON
t
RXH
t
RXL
V
KL
V
KH
V
Kh
I
KH
R
KON
I
KSC
f
K
TX = HIGH; I
RX
= 0; V
K
= V
VS
TX = HIGH;
V
RX
= 0V
TX = LOW;
I
RX
= 1mA
Fig. 1
4.5
5
10
40
0.5
0.5
-20V
0.55 ·
V
VS
0.025·
V
VS
V
TX
= HIGH
V
TX
= LOW; I
K
=10mA
V
TX
= LOW
40
60
100
-5
10
0.45 ·
V
VS
V
VS
0.8V
25
30
130
A
mA
kHz
5.5
20
90
V
k
s
s
ISO interface, K-line (K)
t
Kr
Rise time
V
VS
= 13.5V; Fig. 1
External loads at K-line:
R
K
= 510 pull up
to V
VS
C
K
= 2.2nF to GND
2
6
s
t
Kf
t
KH
t
KL
t
SH
Fall time
Switch high delay time
Switch low delay time
Short circuit detection time
V
VS
= 13.5V;
TX = LOW
V
K
> 0.55 · V
VS
V
VS
= 8V
V
VS
= 13.5V
V
VS
= 20V
10
2
4
4
6
17
17
40
s
s
s
s
Charge pump
V
CP
Charge pump voltage
V
VS
+
7V
V
VS
+
10V
V
VS
+
10V
V
VS
+
14V
V
VS
+
14V
V
VS
+14V
5/17
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