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BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
April 2016
BAT54 / BAT54A / BAT54C / BAT54S
Schottky Diodes
Connection Diagram
BAT54
3
3
3
BAT54A
3
L4P
2
1
1
2
1
BAT54C
3
2NC
1
3
2
BAT54S
SOT-23
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
1
2
1
2
Ordering Information
Part Number
BAT54
BAT54_D87Z
BAT54A
BAT54C
BAT54S
BAT54S_D87Z
Top Mark
L4P
L4P
L42
L43
L44
L44
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
3k per Tape and Reel
10k per Tape and Reel
3k per Tape and Reel
3k per Tape and Reel
3k per Tape and Reel
10k per Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
600
-55 to +150
-55 to +150
Unit
V
mA
mA
C
C
© 1993 Fairchild Semiconductor Corporation
BAT54 / BAT54A / BAT54C / BAT54S Rev. 2.3
www.fairchildsemi.com
BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
JA
Power Dissipation
Parameter
Thermal Resistance, Junction-to-Ambient
Value
290
430
Unit
mW
C/W
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
R
Parameter
Breakdown Voltage
Conditions
I
R
= 10
A
I
F
= 0.1 mA
I
F
= 1 mA
Min.
30
Max.
240
320
400
500
0.8
2
10
5.0
Unit
V
mV
mV
mV
mV
V
A
pF
ns
V
F
Forward Voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
T
t
rr
Reverse Leakage
Total Capacitance
Reverse Recovery Time
V
R
= 25 V
V
R
= 1 V, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
© 1993 Fairchild Semiconductor Corporation
BAT54 / BAT54A / BAT54C / BAT54S Rev. 2.3
www.fairchildsemi.com
2
BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
Typical Performance Characteristics
1000
10
-1
T
A
=125 C
100
o
Reverse Current, I
R
[
A]
I
F
-Forward Current [A]
10
-2
10
1
0.1
0.01
1E-3
1E-4
o
10
-3
-25 C
o
T
A
=100 C
o
T
A
=75 C
o
10
-4
25 C
75 C
o
o
T
A
=25 C
o
10
-5
100 C
o
T
A
=-25 C
0
5
10
15
20
25
30
10
-6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1E-5
V
F
-Forward Voltage [V]
Reverse Voltage, V
R
[V]
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
16
14
12
Capacitance [pF]
10
8
6
4
2
0
1
2
3
4
5
6
7
8
9
10
V
R
-Reverse Voltage [V]
Figure 3. Total Capacitance vs. Reverse Voltage
© 1993 Fairchild Semiconductor Corporation
BAT54 / BAT54A / BAT54C / BAT54S Rev. 2.3
www.fairchildsemi.com
3
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