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BC858CLT1

Description
Bipolar Transistors - BJT 100mA 30V PNP
CategoryDiscrete semiconductor    The transistor   
File Size125KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 30V PNP

BC858CLT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionCASE 318-08, TO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC856ALT1G Series,
SBC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
COLLECTOR
3
2
EMITTER
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Emitter−Base Voltage
Collector Current
Continuous
Collector Current
Peak
Symbol
V
CEO
Value
−65
−45
−30
V
−80
−50
−30
−5.0
−100
−200
V
mAdc
mAdc
1
Symbol
P
D
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
xx
M
G
xx M
G
G
Unit
V
1
2
3
V
CBO
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
V
EBO
I
C
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
= Device Code
xx = (Refer to page 6)
= Date Code*
= Pb−Free Package
R
qJA
P
D
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
300
2.4
417
−55
to +150
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 13
1
Publication Order Number:
BC856ALT1/D

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Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction CASE 318-08, TO-236, 3 PIN CASE 318-08, TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3 CASE 318-08, TO-236, 3 PIN
Contacts 3 3 3 3 3 3 3
Manufacturer packaging code 318-08 318-08 CASE 318-08 318-08 318-08 318-08 318-08
Reach Compliance Code not_compliant not_compliant not_compliant compliant compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 65 V 65 V 30 V 30 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 125 220 125 220 220 420
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e3 e3 e0 e0
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240 260 260 240 240
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W 0.3 W 0.3 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn80Pb20)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 40 40 30 30
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Brand Name ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Contains lead - Lead free Lead free Contains lead Contains lead
Humidity sensitivity level 1 1 1 1 1 1 -
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