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BLF7G20L-250P118

Description
RF MOSFET Transistors Single 65V 0.078Ohms
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF7G20L-250P118 Overview

RF MOSFET Transistors Single 65V 0.078Ohms

BLF7G20L-250P118 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current65 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance135 mOhms
TechnologySi
Gain18 dB
Output Power70 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingCut Tape
PackagingMouseReel
PackagingReel
ConfigurationDual
Height4.7 mm
Length41.29 mm
Operating Frequency1.8 GHz to 1.88 GHz
Factory Pack Quantity100
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.78 V
Width17.12 mm
BLF7G20L-250P;
BLF7G20LS-250P
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1900
V
DS
(V)
28
P
L(AV)
(W)
70
G
p
(dB)
18
D
(%)
35
ACPR
(dBc)
29.5
[1]
Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1805 MHz to 1880 MHz frequency range

BLF7G20L-250P118 Related Products

BLF7G20L-250P118 BLF7G20LS-250P118
Description RF MOSFET Transistors Single 65V 0.078Ohms RF MOSFET Transistors Single 65V 0.078Ohms
Product Category RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP
RoHS Details Details
Transistor Polarity N-Channel N-Channel
Id - Continuous Drain Current 65 A 65 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Rds On - Drain-Source Resistance 135 mOhms 135 mOhms
Technology Si Si
Gain 18 dB 18 dB
Output Power 70 W 70 W
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-539A-5 SOT-539B-3
Configuration Dual Dual
Height 4.7 mm 4.7 mm
Length 41.29 mm 32.77 mm
Operating Frequency 1.8 GHz to 1.88 GHz 1.8 GHz to 1.88 GHz
Factory Pack Quantity 100 100
Type RF Power MOSFET RF Power MOSFET
Vgs - Gate-Source Voltage 13 V 13 V
Vgs th - Gate-Source Threshold Voltage 1.78 V 1.78 V
Width 17.12 mm 17.12 mm
Packaging Reel Reel
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