NTJD2152PT1 datasheet, PDF - EEWORLD Datasheet

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NTJD2152PT1: DescriptionMOSFET 8V Dual P-Channel; CategoryDiscrete semiconductor The transistor; File Size126KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTJD2152PT1 Overview

MOSFET 8V Dual P-Channel

NTJD2152PT1 Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Contains lead
Maker	ON Semiconductor
Parts packaging code	SC-70
package instruction	2 X 2 MM, CASE 419B-02, SC-88, SC-70-6, 6 PIN
Contacts	6
Manufacturer packaging code	419B-02
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	8 V
Maximum drain current (Abs) (ID)	0.775 A
Maximum drain current (ID)	0.775 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	40 pF
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.55 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn80Pb20)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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NTJD2152P

Trench Small Signal

MOSFET

8 V, Dual P−Channel, SC−88

ESD Protection

Features

http://onsemi.com

(BR)DSS

DS(on)

TYP

0.22

−4.5

−8

0.32

−2.5

0.51

−1.8

−0.775

Max

•

Leading –8 V Trench for Low R

DS(ON)

Performance

ESD Protected Gate

Small Footprint (2 x 2 mm)

Same Package as SC−70−6

Pb−Free Packages are Available

Load Power switching

DC−DC Conversion

Li−Ion Battery Charging Circuits

Cell Phones, Media Players, Digital Cameras, PDAs

Applications

SOT−363

SC−88 (6 LEADS)

Value

−8.0

±8.0

Unit

MAXIMUM RATINGS

= 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current

(Based on R

qJA

)

Power Dissipation

(Based on R

qJA

)

Continuous Drain

Current

(Based on R

qJL

)

Power Dissipation

(Based on R

qJL

)

Pulsed Drain Current

Steady

State

Steady

State

Steady

State

Steady

State

= 25

°C

= 85

°C

= 25

°C

= 85

°C

= 25

°C

= 85

°C

= 25

°C

= 85

°C

≤10

STG

Symbol

DSS

−0.775

−0.558

0.27

0.14

−1.1

−0.8

0.55

0.29

±1.2

−55

150

−0.775

260

Top View

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

TA M

S1 G1 D2

= Device Code

= Date Code

= Pb−Free Package

SC−88/SOT−363

CASE 419B

STYLE 28

Operating Junction and Storage Temperature

Continuous Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

(Note: Microdot may be in either location)

Symbol

qJA

qJL

Typ

400

194

Max

460

226

Unit

°C/W

THERMAL RESISTANCE RATINGS

(Note 1)

Parameter

Junction−to−Ambient – Steady State

Junction−to−Lead (Drain) – Steady State

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

Semiconductor Components Industries, LLC, 2006

March, 2006

−

Rev. 3

Publication Order Number:

NTJD2152/D

NTJD2152PT1 Related Products

	NTJD2152PT1	NTJD2152PT2G
Description	MOSFET 8V Dual P-Channel	MOSFET 8V Dual P-Channel ESD Protection
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Contains lead	Lead free
Maker	ON Semiconductor	ON Semiconductor
Parts packaging code	SC-70	SC-70
package instruction	2 X 2 MM, CASE 419B-02, SC-88, SC-70-6, 6 PIN	2 X 2 MM, LEAD FREE, CASE 419B-02, SC-88, SC-70-6, 6 PIN
Contacts	6	6
Manufacturer packaging code	419B-02	419B-02
Reach Compliance Code	not_compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	8 V	8 V
Maximum drain current (Abs) (ID)	0.775 A	1.1 A
Maximum drain current (ID)	0.775 A	0.775 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	40 pF	40 pF
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e0	e3
Number of components	2	2
Number of terminals	6	6
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.55 W	0.55 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn80Pb20)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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