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BC847A-T

Description
Bipolar Transistors - BJT 100mA 45V
Categorysemiconductor    Discrete semiconductor   
File Size78KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BC847A-T Overview

Bipolar Transistors - BJT 100mA 45V

BC847A-T Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerMCC
RoHSNo
Mounting StyleSMD/SMT
Package / CaseSOT-523-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Height0.8 mm
Length1.7 mm
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Pd - Power Dissipation150 mW
Factory Pack Quantity3000
Width0.85 mm
Unit Weight0.000071 oz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC848C
NPN
Plastic-Encapsulate
Transistors
SOT-23
A
D
Features
Power Dissipation: 0.225W (T
amb
=25 )(Note 1)
Collector Current: 0.1A
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Maximum Ratings
Operating temperature : -55
Storage temperature : -55
to +150
to +150
DEVICE MARKING
BC846A=1A,46A; BC846B=1B,46B;
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC846
BC847
BC848
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846
BC847
BC848
Collector-Emitter Breakdown Voltage
(I
E
=10µAdc, I
C
=0)
Collector Cut-off Current
BC846 (V
CB
=80V, I
E
=0)
BC847 (V
CB
=50V, I
E
=0)
BC848 (V
CB
=30V, I
E
=0)
Collector Cut-off Current
BC846 (V
CE
=60V, I
B
=0)
BC847 (V
CE
=45V, I
B
=0)
BC848 (V
CE
=30V, I
B
=0)
Emitter Cut-off Current
(V
EB
=5V, I
C
=0mA)
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B
BC847C, BC848C
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(V
CE
=5V, I
C
=10mA, f=100MHz)
Vdc
---
---
---
80
50
30
Vdc
---
---
---
---
---
65
45
30
Vdc
6
0.1
µAdc
DIM
A
B
C
D
E
F
G
H
J
K
G
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
H
J
V
(BR)CEO
V
(BR)EBO
I
CBO
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
I
CEO
---
0.1
µAdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
I
EBO
H
FE(1)
---
0.1
µAdc
V
CE(sat)
V
BE(sat)
f
T
110
200
420
---
---
100
220
450
800
0.5
1.1
---
Vdc
Vdc
MHz
.037
.950
.037
.950
Note 1: Transistor mounted on an FR4 printed-circuit board
www.mccsemi.com
Revision: 5
1 of 2
2008/01/01
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