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FF300R17KE3_S4

Description
IGBT Modules IGBT Module 300A 1700V
Categorysemiconductor    Discrete semiconductor   
File Size393KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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FF300R17KE3_S4 Overview

IGBT Modules IGBT Module 300A 1700V

FF300R17KE3_S4 Parametric

Parameter NameAttribute value
Product CategoryIGBT Modules
ManufacturerInfineon
RoHSDetails
Factory Pack Quantity10
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FF300R17KE3
VorläufigeDaten
PreliminaryData
V
CES

1700
300
404
600
1450
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,2







typ.
2,00
2,40
5,8
3,50
2,5
27,0
0,90


0,28
0,30
0,08
0,10
0,80
1,00
0,12
0,20
71,0
105
64,0
94,0
max.
2,45
6,4




3,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlled3Diode
62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlled3diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 300 A, V
GE
= 15 V
I
C
= 300 A, V
GE
= 15 V
I
C
= 12,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1700 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 300 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 4,7
I
C
= 300 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 4,7
I
C
= 300 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 4,7
I
C
= 300 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 4,7
I
C
= 300 A, V
CE
= 900 V, L
S
= 60 nH
V
GE
= ±15 V, di/dt = 3600 A/µs
R
Gon
= 4,7
I
C
= 300 A, V
CE
= 900 V, L
S
= 60 nH
V
GE
= ±15 V, du/dt = 3500 V/µs
R
Goff
= 4,7
V
GE
15 V, V
CC
= 1000 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


t
P
10 µs, T
vj
= 125°C
1200

0,033

A
0,085 K/W
K/W
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:HS
approvedby:WR
dateofpublication:2013-10-03
revision:2.1
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