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IPP020N08N5

Description
Gate Drivers
Categorysemiconductor    Discrete semiconductor   
File Size1MB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

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IPP020N08N5 Overview

Gate Drivers

IPP020N08N5 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance1.8 mOhms
Vgs th - Gate-Source Threshold Voltage2.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge223 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingTube
Fall Time37 ns
Forward Transconductance - Min114 S
Height15.65 mm
Length10 mm
Pd - Power Dissipation375 W
ProductMOSFET
Rise Time36 ns
Factory Pack Quantity500
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time102 ns
Typical Turn-On Delay Time40 ns
Width4.4 mm
Unit Weight0.211644 oz
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
ª
5Power-Transistor,80V
IPP020N08N5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
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