BD135G, BD137G, BD139G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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Features
•
High DC Current Gain
•
BD 135, 137, 139 are complementary with BD 136, 138, 140
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD135G
BD137G
BD139G
Collector−Base Voltage
BD135G
BD137G
BD139G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
V
CBO
45
60
100
V
EBO
I
C
I
B
P
D
1.25
10
P
D
12.5
100
T
J
, T
stg
– 55 to + 150
Watts
mW/°C
°C
Watts
mW/°C
5.0
1.5
0.5
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
1.5 A POWER TRANSISTORS
NPN SILICON
45, 60, 80 V, 12.5 W
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
BD1xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
10
100
Unit
°C/W
°C/W
Y
WW
BD1xx
G
= Year
= Work Week
= Device Code
xx = 35, 37, 39
= Pb−Free Package
ORDERING INFORMATION
Device
BD135G
BD135TG
BD137G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units / Box
50 Units / Rail
500 Units / Box
500 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
BD139G
1
December, 2013 − Rev. 17
Publication Order Number:
BD135/D
BD135G, BD137G, BD139G
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
Collector−Emitter Sustaining Voltage*
(I
C
= 0.03 Adc, I
B
= 0)
BD135G
BD137G
BD139G
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
C
= 125_C)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
DC Current Gain
(I
C
= 0.005 A, V
CE
= 2 V)
(I
C
= 0.15 A, V
CE
= 2 V)
(I
C
= 0.5 A V
CE
= 2 V)
Collector−Emitter Saturation Voltage*
(I
C
= 0.5 Adc, I
B
= 0.05 Adc)
Base−Emitter On Voltage*
(I
C
= 0.5 Adc, V
CE
= 2.0 Vdc)
Symbol
BV
CEO
*
45
60
80
I
CBO
−
−
I
EBO
h
FE
*
25
40
25
V
CE(sat)
*
−
V
BE(on)
*
−
1
0.5
Vdc
−
250
−
Vdc
−
0.1
10
10
mAdc
−
−
−
−
mAdc
Min
Max
UnIt
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
TYPICAL CHARACTERISTICS
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 2 V
h
FE
, DC CURRENT GAIN
0.3
I
C
/I
B
= 10
150°C
150°C
25°C
100
−55°C
0.2
−55°C
25°C
0.1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
BD135G, BD137G, BD139G
PACKAGE DIMENSIONS
4
TO−225
CASE 77−09
ISSUE AC
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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Phone:
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For additional information, please contact your local
Sales Representative
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4
BD135/D
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