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BAV202-GS08

Description
Diodes - General Purpose, Power, Switching 200 Volt 625mA
Categorysemiconductor    Discrete semiconductor   
File Size97KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Diodes - General Purpose, Power, Switching 200 Volt 625mA

BAV202-GS08 Parametric

Parameter NameAttribute value
Product CategoryDiodes - General Purpose, Power, Switching
ManufacturerVishay
RoHSDetails
ProductGeneral Purpose Diodes
Mounting StyleSMD/SMT
Package / CaseQuadro MELF SOD-80-2
Peak Reverse Voltage200 V
Max Surge Current1 A
If - Forward Current0.25 A
ConfigurationSingle
Recovery Time50 ns
Vf - Forward Voltage1 V
Ir - Reverse Current0.1 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Height1.5 mm
Length3.5 mm
Factory Pack Quantity2500
TypeSwitching Diode
Width1.7 mm
Unit Weight0.001199 oz
BAV200, BAV201, BAV202, BAV203
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• General purposes
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAV200
BAV201
BAV202
BAV203
TYPE
DIFFERENTIATION
V
RRM
= 60 V
V
RRM
= 120 V
V
RRM
= 200 V
V
RRM
= 250 V
ORDERING CODE
BAV200-GS18 or BAV200-GS08
BAV201-GS18 or BAV201-GS08
BAV202-GS18 or BAV202-GS08
BAV203-GS18 or BAV203-GS08
TYPE
MARKING
-
-
-
-
INTERNAL
CONSTRUCTION
Single
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BAV200
Repetitive peak reverse voltage
BAV201
BAV202
BAV203
BAV200
Reverse voltage
BAV201
BAV202
BAV203
Forward continuous current
Peak forward surge current
Repetitive peak forward current
Power dissipation
t
p
= 1 s, T
j
= 25 °C
f = 50 Hz
SYMBOL
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FRM
P
tot
VALUE
60
120
200
250
50
100
150
200
250
1
625
500
UNIT
V
V
V
V
V
V
V
V
mA
A
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
175
- 65 to + 175
UNIT
K/W
°C
°C
Rev. 1.7, 31-Jul-12
Document Number: 85544
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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