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VN3205
N-Channel Enhancement-Mode
Vertical DMOS FETs
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Applications
Ordering Information
Part Number
VN3205N3-G
VN3205N3-G P002
VN3205N3-G P003
VN3205N3-G P005 3-Lead TO-92
VN3205N3-G P013
VN3205N3-G P014
VN3205N8-G
VN3205NW
VN3205NJ
VN3205ND
3-Lead TO-243AA (SOT-89)
Product Summary
Packing
1000/Bag
BV
DSS
/BV
DGS
(V)
Package Option
3-Lead TO-92
R
DS(ON)
0.3
(max) (Ω)
(max) (V)
V
GS(th)
2.4
50
2000/Reel
Pin Configuration
DRAIN
2000/Reel
---
---
---
SOURCE
GATE
Die in wafer form
Die on adhesive tape
Die in waffle pack
TO-92 (N3)
DRAIN
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF32 for layout and dimensions.
SOURCE
DRAIN
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-243AA (SOT-89) (N8)
Product Marking
Si VN
3 2 0 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
TO-92 (N3)
VN2LW
W = Code for week sealed
= “Green” Packaging
Typical Thermal Resistance
Package
θ
ja
3-Lead TO-92
3-Lead TO-243AA (SOT-89)
Doc.# DSFP-VN3205
C101612
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
132
O
C/W
133
O
C/W
Supertex inc.
www.supertex.com
VN3205
Thermal Characteristics
Package
TO-92
TO-243AA
(continuous) (A)
I
D
*
(pulsed) (A)
I
D
Power Dissipation
@T
C
= 25 C (W)
O
I
DR
†
(A)
1.2
1.5
I
DRM
(A)
8.0
8.0
1.2
1.5
8.0
8.0
1.0
1.6
(T
A
= 25
O
)
Notes:
* I
D
(continuous) is limited by max rated T
j
, T
a
= 25
O
C.
† Total for package.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
j
O
Electrical Characteristics
(T = 25
C unless otherwise specified)
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-Source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero Gate voltage drain current
ON-state Drain current
TO-92
Static Drain-to-Source
ON-state resistance
TO-243AA
TO-92
TO-243AA
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common Source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Min
50
0.8
-
-
-
-
3.0
-
-
-
-
-
1.0
-
-
-
-
-
-
-
-
-
Typ
-
-
-4.3
1.0
-
-
14
-
-
-
-
0.85
1.5
220
70
20
-
-
-
-
-
300
Max
-
2.4
-5.5
100
10
1.0
-
0.45
0.45
0.3
0.3
1.2
-
300
120
30
10
15
25
25
1.6
-
V
ns
ns
pF
%/
O
C
mho
Ω
Units
V
V
mV/
O
C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 10V, V
DS
= 5.0V
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 4.5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 3.0A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 3.0A
V
DS
= 25V, I
D
= 2.0A
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 2.0A,
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.0A
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
VDD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
Doc.# DSFP-VN3205
C101612
10%
INPUT
D.U.T.
2
Supertex inc.
www.supertex.com
VN3205
Typical Performance Curves
20
Output Characteristics
20
Saturation Characteristics
16
V
GS
= 10V
16
V
GS
= 10V
I
D
(amperes)
I
D
(amperes)
12
8V
12
8V
8.0
6V
8.0
6V
4.0
4V
3V
4.0
4V
3V
0
0
10
20
V
DS
(volts)
30
40
50
00
2.0
4.0
V
DS
(volts)
6.0
8.0
10
5.0
Transconductance vs. Drain Current
V
DS
= 25V
3.2
Power Dissipation vs. Case Temperature
4.0
2.4
G
FS
(seimens)
P
D
(watts)
3.0
TO-243AA
1.6
(T
A
= 25°C)
T
A
= -55 C
O
2.0
25
O
C
125
O
C
TO-92
0.8
1.0
0
0
2.0
I
D
(amperes)
4.0
6.0
8.0
10
0
0
25
50
75
100
125
150
T
C
( C)
O
10
Maximum Rated Safe Operating Area
TO-92 (pulsed)
TO-243AA
(pulsed)
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
1.0
I
D
(amperes)
TO-243AA (DC)
TO-92 (DC)
TO-243AA
T
A
= 25
O
C
P
D
= 1.6W
0.6
0.4
0.1
0.2
T
C
= 25
O
C
0.01
0
1.0
TO-92
T
C
= 25
O
C
P
D
= 1.0W
0.01
0.1
1.0
10
V
DS
(volts)
10
100
0
0.001
t
p
(seconds)
Doc.# DSFP-VN3205
C101612
3
Supertex inc.
www.supertex.com
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