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FDP8880 / FDB8880
0
May
2008
FDP8880 / FDB8880
N-Channel PowerTrench
®
MOSFET
30V, 54A, 11.6mΩ
Features
r
DS(ON)
= 14.5mΩ, V
GS
= 4.5V, I
D
= 40A
r
DS(ON)
= 11.6mΩ, V
GS
= 10V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Complicant
tmM
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
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