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MUR30040CTR

Description
Rectifiers SI S-FST RECOV 2TWR 50-600V300A400P/280R
CategoryDiscrete semiconductor    diode   
File Size373KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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MUR30040CTR Overview

Rectifiers SI S-FST RECOV 2TWR 50-600V300A400P/280R

MUR30040CTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionR-PUFM-X2
Reach Compliance Codecompliant
applicationSUPER FAST RECOVERY
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PUFM-X2
Maximum non-repetitive peak forward current2750 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current150 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage400 V
Maximum reverse current25 µA
Maximum reverse recovery time0.11 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
MUR30040CT thru MUR30060CTR
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 to 600 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 300 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MUR30040CT(R)
400
280
400
-55 to 150
-55 to 150
MUR30060CT(R)
600
420
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated
DC blocking voltage (per leg)
Maximum reverse recovery time
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 150 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MUR30040CT(R)
300
2750
1.3
25
3
110
MUR30060CT(R)
300
2750
1.7
25
3
150
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
0.40
0.40
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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