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BAL-99-E6433

Description
Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Categorysemiconductor    Discrete semiconductor   
File Size66KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BAL-99-E6433 Overview

Diodes - General Purpose, Power, Switching Silicon Tuning Diode

BAL-99-E6433 Parametric

Parameter NameAttribute value
Product CategoryDiodes - General Purpose, Power, Switching
ManufacturerInfineon
RoHSDetails
ProductSwitching Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Peak Reverse Voltage85 V
Max Surge Current4.5 A
If - Forward Current250 mA
ConfigurationSingle
Recovery Time4 ns
Vf - Forward Voltage1250 mV
Ir - Reverse Current50 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
QualificationAEC-Q100
PackagingCut Tape
PackagingReel
PackagingMouseReel
Height1 mm
Length2.9 mm
Pd - Power Dissipation370 mW
Factory Pack Quantity10000
TypeSwitching Diode
Width1.3 mm
Unit Weight0.000282 oz
BAL99...
Silicon Switching Diode
For high-speed switching applications
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAL99
!

Type
BAL99
Parameter
Diode reverse voltage
Peak reverse voltage-
Forward current
Peak forward current
Package
SOT23
Configuration
single
Symbol
V
R
V
RM
I
F
I
FM
I
FS
P
tot
T
j
T
stg
Value
80
85
250
-
4.5
370
150
-65 ... 150
Marking
JFs
Unit
V
mA
A
mW
°C
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Surge forward current,
t
= 1 µs
Total power dissipation
T
S
54°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Symbol
R
thJS
Value
260
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

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