VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
N−Channel TO−92
Features
http://onsemi.com
•
This is a Pb−Free Device*
150 mA, 60 V
R
DS(on)
= 7.5
W
N−Channel
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
Value
60
60
±
20
±
40
150
1000
400
3.2
−55
to
+150
mW
mW/°C
°C
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
I
DM
P
D
T
J
, T
stg
G
D
MAXIMUM RATINGS
Rating
Drain
−Source
Voltage
Drain−Gate Voltage (R
GS
= 1.0 MW)
Gate−Source Voltage
−
Continuous
−
Non−repetitive (t
p
≤
50
ms)
Drain Current
−
Continuous
−
Pulsed
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
S
TO−92
CASE 29
STYLE 22
12
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
Symbol
R
qJA
T
L
Max
312.5
300
Unit
°C/W
°C
MARKING DIAGRAM
& PIN ASSIGNMENT
VN22
22LL
AYWW
G
G
1
Source
3
Drain
2
Gate
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 4
1
Publication Order Number:
VN2222LL/D
VN2222LLG
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100
mAdc)
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125°C)
Gate−Body Leakage Current, Forward
(V
GSF
= 30 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 10 Vdc, I
D
= 0.5 Vdc, T
C
= 125°C)
Drain−Source On−Voltage
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
On−State Drain Current
(V
GS
= 10 Vdc, V
DS
≥
2.0 V
DS(on)
)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(V
DD
= 15 Vdc, I
D
= 600 mA,
R
gen
= 25
W,
R
L
= 23
W)
t
on
t
off
−
−
10
10
ns
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
60
25
5.0
pF
V
GS(th)
r
DS(on)
0.6
2.5
Vdc
W
V
(BR)DSS
I
DSS
60
−
Vdc
mAdc
Symbol
Min
Max
Unit
−
−
−
10
500
−100
I
GSSF
nAdc
−
−
−
−
750
100
7.5
13.5
1.5
3.75
−
−
V
DS(on)
Vdc
I
D(on)
g
fs
mA
mmhos
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
VN2222LLG
Package
TO−92
(Pb−Free)
Shipping
†
1000 Unit / Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
VN2222LLG
2
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
7
8
9
7V
6V
5V
4V
3V
10
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN- SOURCE VOLTAGE (VOLTS)
V
GS
, GATE - SOURCE VOLTAGE (VOLTS)
T
A
= 25°C
I D, DRAIN CURRENT (AMPS)
V
GS
= 10 V
9V
8V
0.8
V
DS
= 10 V
- 55°C
0.6
0.4
125°C
1
25°C
0.2
Figure 1. Ohmic Region
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
Figure 2. Transfer Characteristics
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
GS
= 10 V
I
D
= 200 mA
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
0
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
DS
= V
GS
I
D
= 1 mA
Figure 3. Temperature versus Static
Drain−Source On−Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
http://onsemi.com
3
VN2222LLG
PACKAGE DIMENSIONS
TO−92
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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VN2222LL/D
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