Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
ib
, INPUT ADMITTANCE
80
y ib , INPUT ADMITTANCE (mmhos)
70
60
- b
ib
jb ib (mmhos)
50
40
30
20
10
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
- 50
- 60
- 20
1000 MHz
- 30
- 40
700
400
200
100
g
ib
0
- 10
0
10
20
30
40
50
g
ib
(mmhos)
60
70
80
Figure 1. Rectangular Form
y
fb
, FORWARD TRANSFER ADMITTANCE
y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
70
60
50
40
30
20
10
0
- 10
- 20
- 30
10
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
70
60
50
20
jb fb (mmhos)
- g
fb
40
b
fb
50
100
60
200
Figure 2. Polar Form
400
600
700
30
1000 MHz
40
10
30
20
g
fb
(mmhos)
0
- 10
- 20 - 30
Figure 3. Rectangular Form
Figure 4. Polar Form
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3
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
y
rb
, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
5.0
0
100
4.0
MPS H11
3.0
-b
rb
2.0
MPS H10
- 4.0
-g
rb
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
- 5.0
-2.0 -1.8 -1.2 -0.8
1000 MHz
-0.4
0
0.4
g
rb
(mmhos)
0.8
1.2
1.6
2.0
-b
rb
- 1.0
jb rb (mmhos)
200
- 2.0
400
- 3.0
700
1.0
Figure 5. Rectangular Form
y
ob
, OUTPUT ADMITTANCE
10
yob, OUTPUT ADMITTANCE (mmhos)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
g
ob
0
0
2.0
2.0
100
b
ob
jb ob(mmhos)
6.0
8.0
700
10
Figure 6. Polar Form
1000 MHz
4.0
400
200
4.0
6.0
g
ob
(mmhos)
8.0
10
Figure 7. Rectangular Form
Figure 8. Polar Form
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4
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
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ON Semiconductor reserves the right to make changes without further notice to any products herein.
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