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RN1411T5LFT

Description
Bipolar Transistors - Pre-Biased NPN 50V 0.1A TRANSISTOR LOG
Categorysemiconductor    Discrete semiconductor   
File Size414KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Bipolar Transistors - Pre-Biased NPN 50V 0.1A TRANSISTOR LOG

RN1411T5LFT Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerToshiba Semiconductor
RoHSDetails
ConfigurationSingle
Transistor PolarityNPN
Typical Input Resistor10 kOhms
Mounting StyleSMD/SMT
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Maximum Operating Temperature+ 150 C
PackagingReel
DC Current Gain hFE Max120
Factory Pack Quantity3000
RN1410,RN1411
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1410, RN1411
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2410, RN2411
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
5
100
200
150
−55
to 125
Unit
V
V
V
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1410
RN1411
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 1 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
120
3.29
7
Typ.
0.1
250
3
4.7
10
Max
100
100
700
0.3
6
6.11
13
V
MHz
pF
kΩ
Unit
nA
nA
Start of commercial production
1985-05
1
2014-03-01

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